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參數(shù)資料
| 型號(hào)： | BUK553-48C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Voltage clamped logic level FET |
| 中文描述： | 21 A, 30 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 69K |
| 代理商： | BUK553-48C |
Philips Semiconductors
Product specification
PowerMOS transistor
Voltage clamped logic level FET
BUK553-48C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Protected N-channel enhancement
mode logic level field-effect power
transistor in a plastic envelope.
The device is intended for use in
automotive
applications.
built-in zener diodes providing active
drain voltage clamping.
SYMBOL
PARAMETER
MIN.
TYP
.
MAX.
UNIT
V
(CL)DSR
I
D
P
tot
T
j
W
DSRR
Drain-source clamp voltage
Drain current (DC)
Total power dissipation
Junction temperature
Repetitive clamped turn off
energy; T
= 150C
Drain-source on-state
resistance; V
GS
= 5 V
40
48
58
21
75
175
50
V
A
W
C
mJ
It
has
R
DS(ON)
85
m
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DG
±
V
GS
I
D
I
D
I
DM
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak
value)
Total power dissipation
Storage temperature
Junction Temperature
CONDITIONS
continuous
continuous
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
MIN.
-
-
-
-
-
-
MAX.
30
30
15
21
15
84
UNIT
V
V
V
A
A
A
P
tot
T
stg
T
j
T
mb
= 25 C
-
-
-
75
175
175
W
C
C
- 55
- 55
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP.
-
MAX.
2
UNIT
K/W
R
th j-a
-
60
-
K/W
d
g
s
1 2 3
tab
August 1994
1
Rev 1.000
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| BUK553-50A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
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