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參數資料
| 型號： | BUK6215-75C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS FET |
| 中文描述： | 57 A, 75 V, 0.0205 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 218K |
| 代理商： | BUK6215-75C |
1.
Product profile
1.1 General description
Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor
(FET) in a plastic package using advanced TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Compatable with logic and standard
level gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Engine management
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
BUK6215-75C
N-channel TrenchMOS FET
Rev. 02 — 4 October 2010
Product data sheet
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
V
DS
I
D
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C
drain current
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
-
-
75
V
-
-
57
A
P
tot
total power
dissipation
T
mb
= 25 °C; see
Figure 2
-
-
128
W
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 11
-
12.5
15
m
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| BUK6215-75C,118 | 功能描述:MOSFET N-CHAN 75V 57A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK6217-55C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH44V31ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,44V,31A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,44V,31A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:55V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes |
| BUK6217-55C,118 | 功能描述:MOSFET N-CHAN 55V 44A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK6218-40C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V42ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,42A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,42A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:40V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes |
| BUK6218-40C,118 | 功能描述:MOSFET N-CHAN 40V 42A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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