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參數資料
| 型號： | BUK6228-55C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 31 A, 55 V, 0.044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 196K |
| 代理商： | BUK6228-55C |
1.
Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
BUK6228-55C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 4 October 2010
Product data sheet
Quick reference data
Parameter
drain-source voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
Min
-
-
Typ
-
-
Max
55
31
Unit
V
A
P
tot
Static characteristics
R
DSon
total power dissipation
-
-
60
W
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 10 A;
T
j
= 25 °C; see
Figure 11
-
24.8
29
m
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
= 31 A; V
sup
≤
55 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
25
mJ
Dynamic characteristics
Q
GD
gate-drain charge
I
D
= 25 A; V
DS
= 44 V;
V
GS
= 10 V; see
Figure 13
;
see
Figure 14
-
5.76
-
nC
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| BUK6228-55C,118 | 功能描述:MOSFET N-CHAN 55V 31A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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