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參數資料
| 型號： | BUK714R1-40BT |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchPLUS standard level FET |
| 中文描述： | N溝道TrenchPLUS標準電平場效應管 |
| 封裝： | BUK714R1-40BT<SOT426 (D2PAK)|<<http://www.nxp.com/packages/SOT426.html<1<week 1, 2005,; |
| 文件頁數： | 1/13頁 |
| 文件大小： | 194K |
| 代理商： | BUK714R1-40BT |
BUK714R1-40BT
N-channel TrenchPLUS standard level FET
Rev. 02 — 10 February 2009
Product data sheet
1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. The
devices include TrenchPLUS diodes for temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Electrical Power Assisted Steering
(EPAS)
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol Parameter
V
DS
drain-source voltage
I
D
drain current
[1]
Continuous current is limited by package.
Quick reference
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 2
; see
Figure 3
V
GS
= 10 V; T
mb
= 100 °C;
see
Figure 2
T
mb
= 25 °C; see
Figure 1
Min
-
-
Typ
-
-
Max
40
75
Unit
V
A
[1]
[1]
-
-
75
A
P
tot
total power
dissipation
-
-
272
W
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 10 V; I
D
= 50 A;
T
j
= 25 °C; see
Figure 7
;
see
Figure 8
-
3.4
4.1
m
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BUK714R1-40BT /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK714R1-40BT,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7207-30B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS standard level FET |
| BUK7207-30B /T3 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7207-30B,118 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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