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參數資料
| 型號： | BUK7210-55B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | 75 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 191K |
| 代理商： | BUK7210-55B |
BUK7210-55B
N-channel TrenchMOS standard level FET
Rev. 01 — 11 December 2008
Product data sheet
1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
185 °C rated
Q101 compliant
Standard level compatible
Very low on-state resistance
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol Parameter
V
DS
drain-source voltage
I
D
drain current
[1]
Continuous current is limited by package.
Quick reference
Conditions
T
j
≥
25 °C; T
j
≤
185 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
; see
Figure 3
;
Min
-
-
Typ
-
-
Max
55
75
Unit
V
A
[1]
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 10
;
see
Figure 9
-
8.5
10
m
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 75 A; V
sup
≤
55 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
inductive load
-
-
173
mJ
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BUK7210-55B,118 | 功能描述:MOSFET Trans MOSFET N-CH 55V 83A 3-Pin(2+Tab) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7210-55B/C1,118 | 功能描述:MOSFET MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7212-55B | 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 83A 3-Pin(2+Tab) DPAK |
| BUK7212-55B /T3 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7212-55B,118 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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