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參數資料
型號: BUK7513-75B
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS standard level FET
中文描述: N溝道TrenchMOS標準電平場效應管
封裝: BUK7513-75B<SOT78A (TO-220AB)|<<http://www.nxp.com/packages/SOT78A.html<1<week 1, 2005,;
文件頁數: 1/14頁
文件大?。?/td> 187K
代理商: BUK7513-75B
1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
BUK7513-75B
N-channel TrenchMOS standard level FET
Rev. 02 — 25 November 2010
Product data sheet
Quick reference data
Parameter
drain-source
voltage
drain current
Conditions
T
j
25 °C; T
j
175 °C
Min
-
Typ
-
Max
75
Unit
V
I
D
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
; see
Figure 3
T
mb
= 25 °C; see
Figure 2
-
-
75
A
P
tot
total power
dissipation
-
-
157
W
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
; see
Figure 12
-
11.7
13
m
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 75 A; V
sup
75 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
125
mJ
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 10 V; I
D
= 25 A; V
DS
= 60 V;
T
j
= 25 °C; see
Figure 13
-
15
-
nC
相關PDF資料
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BUK7514-55A N-channel TrenchMOS standard level FET
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BUK75150-55A N-channel TrenchMOS standard level FET
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相關代理商/技術參數
參數描述
BUK7513-75B,127 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7514-30 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET
BUK7514-55 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET
BUK7514-55A 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7514-55A,127 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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