- 您現在的位置：買賣IC網 > PDF目錄376498 > BUK9506-55A (NXP SEMICONDUCTORS) CONNECTOR ACCESSORY PDF資料下載
參數資料
| 型號： | BUK9506-55A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 63K |
| 代理商： | BUK9506-55A |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK9506-55A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
level field-effect power transistor in a
plastic
envelope
technology which features very low
on-state resistance. It is intended for
use
in
automotive
purpose switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
using
’
trench
’
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
55
75
230
175
V
A
W
C
and
general
V
GS
= 5 V
V
GS
= 10 V
6.3
5.8
m
m
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
±
V
GSM
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage
CONDITIONS
-
R
GS
= 20 k
-
t
p
≤
50
μ
S
MIN.
-
-
-
-
MAX.
55
55
10
15
UNIT
V
V
V
V
I
D
I
D
I
DM
P
tot
T
stg
, T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
-
-
-
75
75
240
230
175
A
A
A
W
C
- 55
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
0.65
UNIT
K/W
R
th j-a
in free air
60
-
K/W
d
g
s
1 2 3
tab
December 1998
1
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| BUK9508-55A | TrenchMOS logic level FET |
| BUK9508-55 | CONNECTOR ACCESSORY |
| BUK9509-55A | TrenchMOS logic level FET |
| BUK9635-55 | TrenchMOS transistor Logic level FET |
| BUK9775-55 | TrenchMOS transistor Logic level FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BUK9506-55A,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9506-55B | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9506-55B,127 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9506-75B | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9506-75B,127 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。