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參數資料
| 型號： | BUL38D |
| 廠商： | 意法半導體 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistor(高壓快速開關NPN功率晶體管) |
| 中文描述： | 高壓快速NPN電源開關晶體管（高壓快速開關npn型功率晶體管） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 65K |
| 代理商： | BUL38D |
BUL38D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
I
STM PREFERRED SALESTYPE
I
HIGH VOLTAGECAPABILITY
I
LOW SPREADOF DYNAMIC PARAMETERS
I
MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
I
LOW BASE-DRIVEREQUIREMENTS
I
VERYHIGH SWITCHING SPEED
I
FULLY CHARACTERISED AT 125
o
C
I
HIGH RUGGEDNESS
I
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
I
ELECTRONIC TRANSFORMERS FOR
HALOGEN LAMPS
I
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL38D is manufactured using high voltage
Multi
Epitaxial
Planar
switching speeds and high voltage withstand
capability.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
technology
for
high
INTERNAL SCHEMATIC DIAGRAM
June 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Value
800
450
9
5
10
2
4
80
-65 to 150
150
Unit
V
V
V
V
A
A
A
W
o
C
o
C
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (t
p
<5 ms)
Base Current
Base Peak Current (t
p
<5 ms)
Total Dissipation at Tc = 25
o
C
Storage Temperature
Max. Operating Junction Temperature
1
2
3
TO-220
1/6
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| BUL39D | High Voltage Fast-Switching NPN Power Transistor(高壓快速開關NPN功率晶體管) |
| BUL416 | High Voltage Fast-Switching NPN Power Transistor(高電壓快速開關NPN功率晶體管) |
| BUL58D | High Voltage Fast-Switching NPN Power Transistors(高壓快速NPN功率晶體管) |
| BUL87 | High Voltage Fast-Switching NPN Power Transistor(高電壓快速開關NPN功率晶體管) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BUL38D_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL39 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL39D | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUL39D_01 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL3N7 | 功能描述:兩極晶體管 - BJT MEDIUM Vltg PNP Pwr TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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