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參數資料
| 型號： | BUL58D |
| 廠商： | 意法半導體 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistors(高壓快速NPN功率晶體管) |
| 中文描述： | 高壓快速NPN電源開關晶體管（高壓快速npn型功率晶體管） |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 75K |
| 代理商： | BUL58D |
BUL58D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
I
SGS-THOMSON PREFERRED SALESTYPE
I
NPN TRANSISTOR
I
HIGH VOLTAGECAPABILITY
I
LOW SPREADOF DYNAMIC PARAMETERS
I
MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
I
LOW BASE-DRIVEREQUIREMENTS
I
VERYHIGH SWITCHING SPEED
I
FULLY CHARACTERISED AT 125
o
C
I
HIGH RUGGEDNESS
I
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
I
ELECTRONIC TRANSFORMERS FOR
HALOGEN LAMPS
I
ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
I
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL58D is manufactured using high voltage
Multi Epitaxial Planar technology to enhance
switching speeds while maintaining a
RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
wide
INTERNAL SCHEMATIC DIAGRAM
September 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Value
800
450
9
8
16
4
8
85
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
1
2
3
TO-220
1/6
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BUL58D_01 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL59 | 功能描述:兩極晶體管 - BJT NPN High Voltage 850 VCES 400 VCEO RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BU-L6-250 | 功能描述:LUG 6 AWG 1/4" STUD 制造商:mueller electric co 系列:- 包裝:散裝 零件狀態:在售 端子類型:圓形，管狀 螺柱/凸片尺寸:1/4 接線柱 厚度:0.065"（1.65mm） 寬度 - 外邊緣:0.550"（13.97mm） 長度 - 總:1.470"（37.34mm） 安裝類型:自由懸掛 端接:壓接 線規:6 AWG 絕緣:非絕緣 特性:- 顏色:- 觸頭材料:銅 觸頭鍍層:- 絕緣層直徑:- 材料 - 絕緣:- 標準包裝:1 |
| BUL62A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL62B | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
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