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參數(shù)資料
| 型號(hào)： | BUL53BSMD |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR |
| 中文描述： | 12 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CERAMIC, SMD1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | BUL53BSMD |
BUL53BSMD
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPrelim. 7/00
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
D
R
T
j
T
stg
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Thermal Impedance
(when mounted on thermally conducting PCB)
Maximum Junction Temperature
Storage Temperature Range
500V
250V
10V
12A
20A
3A
60W
3.0°C/W
200°C
–55 to +200°C
MECHANICAL DATA
Dimensions in mm
ADVANCED DISTRIBUTED
BASE DESIGN
HIGH VOLTAGE, HIGH SPEED NPN
SILICON POWER TRANSISTOR
SMD1
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
FEATURES
Multi-Base design for efficient energy
distribution across the chip.
SIgnificantly improved switching and energy
ratings across full temperature range.
Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
Triple guard rings for improved control of
high voltages.
CERAMIC SURFACE MOUNT PACKAGE
FULL MIL/AEROSPACE TEMPERATURE
RANGE
SCREENING OPTIONS FOR MILITARY AND
SPACE APPLICATIONS
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE (V
CBO
= 800V)
FAST SWITCHING (t
f
= 100ns)
HIGH ENERGY RATING
Pad 1 – Base
Pad 2 – Collector
Pad 3 – Emitter
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| BUL54 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
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| BUL54ASMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL54A-TO5 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON POWER NPN TRANSISTOR |
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