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參數資料
| 型號： | BUL58 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | 5 AMP SUBMINIATURE POWER RELAY |
| 中文描述： | 先進的分布式基礎設計的高壓高速NPN硅功率晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 22K |
| 代理商： | BUL58 |
Prelim. 7/00
BUL58BSMD
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukV
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Derate above 25°C when used on efficient heatsink
Operating and Storage Temperature Range
T
stg
180V
90V
10V
7A
10A
2A
50W
0.28W/°C
–65 to 200°C
MECHANICAL DATA
Dimensions in mm
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
SMD1 PACKAGE
Pad 2 – Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
FEATURES
Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
Triple Guard Rings for improved control of
high voltages.
Pad 1 – Base
Pad 3 – Emitter
相關PDF資料 |
PDF描述 |
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| BUL58BSMD | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL63A | BJT |
| BUL65A | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7A I(C) | TO-251AA |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BUL58A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL58ASMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| BUL58B | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL58BSMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL58D | 功能描述:兩極晶體管 - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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