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參數(shù)資料
| 型號： | BUL69 |
| 英文描述： | NPN |
| 中文描述： | 叩 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 21K |
| 代理商： | BUL69 |
BUL70A
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
SURFACE MOUNT FOOT PRINT
Designed for use in
electronic ballast applications
FEATURES
Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
Triple Guard Rings for improved control of
high voltages.
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
Collector – Base Voltage(I
E
=0)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Operating and Storage Temperature Range
1000V
500V
10V
4A
7A
2A
3W
–55 to +150°C
MECHANICAL DATA
Dimensions in mm
0.32
0.24
0.10
13°
16°
max.
1.70
10°
max.
6.7
6.3
3.1
2.9
3.7
3.3
7.3
6.7
1.05
2.30
0.80
4.60
1
2
3
4
Pin 1 - Base
Pin 2 - Collector
Pin 3 - Emitter
Pin 4 - Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
SOT-223
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| BUL70A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL7216 | 功能描述:兩極晶體管 - BJT HIGH VOLTAGE FAST SWITCHING NPN POWER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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