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參數資料
| 型號： | BUL704 |
| 廠商： | 意法半導體 |
| 英文描述： | High voltage fast-switching NPN Power Transistor |
| 中文描述： | 高壓快速開關NPN電源晶體管 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 243K |
| 代理商： | BUL704 |
May 2006
Rev 1
1/11
11
Order codes
Part Number
Marking
Package
Packing
BUL704
BUL704
TO-220
Tube
BUL704
High voltage fast-switching NPN Power Transistor
General features
■
NPN Transistor
■
High voltage capability
■
Low spread of dynamic parameters
■
Minimum lot-to-lot spread for reliable operation
■
Very high switching speed
■
In compliance with the 2002/93/EC European
Directive
Description
The device is manufactured using high voltage
Multi-Epitaxial
Planar
switching speeds and medium voltage capability.
technology
for
high
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
Applications
■
Electronic ballast for fluorescent lighting
■
Dedicated for PFC solution in HF ballast half-
bridge voltage fed
Internal schematic diagram
TO-220
1
2
3
www.st.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BUL705 | 功能描述:兩極晶體管 - BJT Hi Vltg FAST SWITCH PNP Pwr TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUL70A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL7216 | 功能描述:兩極晶體管 - BJT HIGH VOLTAGE FAST SWITCHING NPN POWER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUL72A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL72B | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
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