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參數資料
| 型號： | BULD1101E-1 |
| 廠商： | 意法半導體 |
| 英文描述： | High voltage fast-switching NPN Power Transistor |
| 中文描述： | 高壓快速開關NPN電源晶體管 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 258K |
| 代理商： | BULD1101E-1 |
May 2007
Rev 2
1/11
11
Order codes
Part number
Marking
Package
Packaging
BULD1101ET4
BULD1101E
DPAK
Tape & reel
BULD1101E-1
BULD1101E
IPAK
Tube
BULD1101E
High voltage fast-switching NPN Power Transistor
General features
■
High voltage capability
■
Low spread of dynamic parameters
■
Minimum lot-to-lot spread for reliable operation
■
Very high switching speed
■
In compliance with the 2002/93/EC European
Directive
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
Applications
■
Electronic ballast for fluorescent lighting
Internal schematic diagram
DPAK
1
3
3
2
1
IPAK
TO-252
TO-251
www.st.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BULD1101ET4 | 功能描述:兩極晶體管 - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BULD116D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BULD118 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BULD118-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | TO-251AA |
| BULD118D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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