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參數資料
| 型號： | BULD138 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 229K |
| 代理商： | BULD138 |
BULD1101ET4
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
I
HIGH VOLTAGE CAPABILITY
I
LOW SPREAD OF DYNAMIC PARAMETERS
I
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
I
VERY HIGH SWITCHING SPEED
I
LARGE RBSOA
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
I
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
April 2003
1
3
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Value
1100
450
12
3
6
1.5
3
35
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
<5 ms)
Base Current
Base Peak Current (t
p
<5 ms)
Total Dissipation at Tc = 25
o
C
Storage Temperature
Max. Operating Junction Temperature
DPAK
TO-252
(Suffix "T4")
Ordering Code
Marking
Shipment
BULD1101ET4
BULD1101E
Tape & Reel
1/7
相關PDF資料 |
PDF描述 |
|---|---|
| BULD138-1 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-251 |
| BULD26 | |
| BULD26-1 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 4A I(C) | TO-251 |
| BULD38 | |
| BULD38-1 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-251 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BULD138-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-251 |
| BULD25 | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD25D | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD25DR | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD25SL | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
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