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參數資料
| 型號： | BUZ906X4S |
| 英文描述： | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應管(用于音頻電路)) |
| 中文描述： | P溝道功率MOSFET為音頻應用性（P溝道功率型馬鞍山場效應管（用于音頻電路）） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 33K |
| 代理商： | BUZ906X4S |
V
DSX
V
GS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θ
JC
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
BUZ905X4S
–160V
BUZ906X4S
–200V
±14V
–32A
–32A
500W
–55 to 150°C
150°C
0.3°C/W
MECHANICAL DATA
Dimensions in mm (inches)
1
3
4
2
R
38.0 (1.496)
38.2 (1.504)
30.1 (1.185)
30.3 (1.193)
14.9 (0.587)
15.1 (0.594)
3.3 (0.129)
3.6 (0.143)
7.8 (0.307)
8.2 (0.322)
31.5 (1.240)
31.7 (1.248)
4.0 (0.157)
(2 Places)
R =
4.0 (0.157)
4.2 (0.165)
)
)
4.1 (0.161
4.3 (0.169
4.8 (0.187)
(4 places)
W =
H =
8.9 (0.350)
9.6 (0.378)
11.8 (0.463)
12.2 (0.480)
Hex Nut M4
(4 places)
1
1
2
2
0.75 (0.030)
0.85 (0.033)
5.1 (0.201)
5.9 (0.232)
1.95 (0.077)
2.14 (0.084)
P–CHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
P–CHANNEL POWER MOSFET
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (160V & 200V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODE
N–CHANNEL ALSO AVAILABLE
SOT227
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
Pin 4 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
Prelim. 4/94
MAGNA
Magnatec.
Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.
BUZ905X4S
BUZ906X4S
NEW PRODUCT UNDER DEVELOPMENT
POWER MOSFETS FOR
AUDIO APPLICATIONS
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BUZ907 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOSFETS FOR AUDIO APPLICATIONS |
| BUZ907D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:P-CHANNEL POWER MOSFET |
| BUZ907P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOSFETS FOR AUDIO APPLICATIONS |
| BUZ908 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOSFETS FOR AUDIO APPLICATIONS |
| BUZ908D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:P-CHANNEL POWER MOSFET |
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