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參數資料
| 型號： | C1232 |
| 英文描述： | POWER SCHOTTKY RECTIFIER |
| 中文描述： | EEPROM的 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 27K |
| 代理商： | C1232 |
81
IMP, Inc.
Process C1232
CMOS 1.2
μ
m
EEPROM with Lateral PNP
Electrical Characteristics
T=25
o
C Unless otherwise noted
Maximum
Unit
0.65
V
0.55
V
1/2
92
μ
A/V
2
40
mA
V
V
N-Channel Native Transistor
Threshold Voltage
Body Factor
Saturation Current
Conduction Factor
Symbol
VT
ZBN
γ
ZBN
I
DSATN
β
ZBN
Minimum
–0.20
0.30
13
45
Typical
0.37
0.45
15.7
55
Maximum
0.52
0.60
18.9
65
Unit
V
V
1/2
mA
μ
A/V
2
Comments
100x2.5
μ
m
100x2.5
μ
m
100x2.5
μ
m
100x100
μ
m
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Saturation Current
Punch Through Voltage
Poly Field Threshold
Symbol
VT
N
γ
N
β
N
I
DSATN
BVDSS
N
VTF
P(N)
Minimum
0.30
0.35
64
16
5
8
Typical
0.475
0.45
78
25
Comments
100x10
μ
m
100x100
μ
m
100x100
μ
m
100x1.5
μ
m
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Saturation Current
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
P
γ
P
β
P
I
DSATP
BVDSS
P
VTF
P(P)
Minimum
–0.65
0.5
20
–6
–5
–8
Typical
–0.475
0.6
25
–10
Maximum
0.30
0.7
30
–16
Unit
V
V
1/2
μ
A/V
2
mA
V
V
Comments
100x1.2
μ
m
100x1.2
μ
m
100x100
μ
m
100x1.5
μ
m
EECMOS Characteristics
Tunnel Oxide Thickness
Interpoly Oxide Thickness
Buried N+ Sheet Res.
Initial Program/Erase Window
Unprog. Memory Threshold
Endurance
Programming Voltage
Symbol
T
TUNLOX
T
P1P2
ρ
BN+
Minimum
84
340
200
Typical
88
390
300
3.0
3.0
14
Maximum
92
440
400
Unit
nm
nm
/
o
V
V
Cycles
V
Comments
V
T
10,000
12
VPP
17
Lateral PNP
Beta
Early Voltage
Symbol
H
FE
V
AP
Minimum
10
Typical
35
TBD
Maximum
100
Unit
Comments
V
ISO 9001 Registered
相關PDF資料 |
PDF描述 |
|---|---|
| C12C | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| C1309-01 | POWER SCHOTTKY RECTIFIERS |
| C1309-02 | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| C1309-04 | LOW DROP OR-ING POWER SCHOTTKY DIODE |
| C1309-06 | LOW DROP OR-ING POWER SCHOTTKY DIODE |
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