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參數(shù)資料
| 型號： | CD9014E |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR TRANSISTOR |
| 中文描述： | NPN硅平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 88K |
| 代理商： | CD9014E |
NPN SILICON PLANAR TRANSISTOR
CD9014
TO-92
CBE
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PC
Tj, Tstg
VALUE
50
50
5.0
100
625
-55 to +150
UNIT
V
V
V
mA
mW
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Emitter Base Saturation Voltage
Dynamic Characteristics
Output Capacitance
Transition Frequency
SYMBOL
VCEO
VCBO
VEBO
ICBO
IEBO
hFE
VCE(Sat)
VBE(Sat)
TEST CONDITION
IC=1mA, IB=0
IC=100uA, IE=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=1mA,VCE=5V
IC=100mA,IB=5mA
IC=100mA,IB=5mA
MIN
50
50
5.0
-
-
60
-
-
TYP
-
-
-
-
-
-
-
-
MAX
-
-
-
50
50
1000
0.30
1.0
UNIT
V
V
V
nA
nA
V
V
Cob VCB=10V,f=1MHz
ft VCE=5V,IC=10mA,
f=100MHz
NF
VCE=5V, IC=200uA
f=1KHz
A : 60-150, B : 100-300, C : 200-600, D : 400-1000,
D1 : 400-630, D2 : 570-840, D3 : 760-1000, E : >800
-
-
-
3.50
-
pF
MHz
125
Noise Figure
-
-
4.0
dB
hFE CLASSIFICATION
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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| CD9015 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP SILICON PLANAR TRANSISTOR |
| CD9015A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 18V V(BR)CEO | TO-92 |
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