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參數(shù)資料
| 型號(hào)： | CFY77-10 |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
| 中文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 27K |
| 代理商： | CFY77-10 |
AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 1/4
11.01.1996
HL EH PD 21
D a t a s h e e t
Features
*
Very low noise
*
Very high gain
*
For low noise front end amplifiers up to 20 GHz
*
For DBS down converters
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Package 1)
CFY77-08
HG
Q62702-F1549
MW-4
CFY77-10
HH
Q62702-F1559
MW-4
Maximum ratings
Symbol
Unit
Drain-source voltage
VDS
VDG
VGS
ID
TCh
Tstg
Pot
3.5
V
Drain-gate voltage
4.5
V
Gate-source voltage
-3.0
V
Drain current
60
mA
Channel temperature
150
°C
Storage temperature range
-65...+150
°C
Total power dissipation
(T
S
< 51°C)
2)
180
mW
Thermal resistance
Channel-soldering point source
RhChS
550
K/W
1)
Dimensions see chapter Package Outlines
2) T
S
: Temperature measured at soldering point
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