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參數資料
| 型號： | CGH35015F |
| 廠商： | CREE INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX |
| 中文描述： | S BAND, GaN, N-CHANNEL, RF POWER, HEMFET |
| 封裝： | ROHS COMPLIANT PACKAGE-2 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 720K |
| 代理商： | CGH35015F |
Subject to change without notice.
www.cree.com/wireless
CGH3505F
5 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility
transistor designed specifically for 802.16-2004 WiMAX Fixed Access
applications. GaN HEMTs offer high efficiency, high gain and wide
bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz
WiMAX and BWA amplifier applications. The transistor is available in a
flange package.
Package Type: 440166
PN: CGH35015F
PRELIMINARY
R
Features
3.3 - 3.9 GHz Operation
>11 dB Small Signal Gain
>2.0 W P
OUT
at 2.0 % EVM
24 % Efficiency at 2.0 W P
OUT
15 W Typical P
3dB
WiMAX Fixed Access 802.16-2004 OFDM
Typical Performance 3.4-3.9GHz
(T
C
= 25C)
Parameter
3.4 GHz
3.5 GHz
3.6 GHz
3.8 GHz
3.9 GHz
Units
Gain @ P
OUT
= 2 W
11.6
11.8
12.0
11.8
11.2
dB
P
OUT
@ 2.0 % EVM
33.0
33.0
33.0
33.5
33.5
dBm
Drain Efficiency @ 2.0 % EVM
23.0
23.0
24.0
18.0
17.0
%
Input Return Loss
4.0
4.5
6.0
13.0
9.0
dB
Note:
Measured in the CGH35015F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64
QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
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| CGH3501603DLF | 制造商:TT Electronics / IRC 功能描述:CGH3501603DLF |
| CGH3501604DLF | 制造商:TT Electronics / IRC 功能描述:CGH3501604DLF |
| CGH3501604FLF | 制造商:TT Electronics / IRC 功能描述:CGH3501604FLF |
| CGH3501606DLF | 制造商:TT Electronics / IRC 功能描述:CGH3501606DLF |
| CGH3501606FLF | 制造商:TT Electronics / IRC 功能描述:CGH3501606FLF |
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