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參數資料
| 型號： | CJF45H11 |
| 廠商： | Continental Device India Limited |
| 英文描述： | SILICON PLANAR POWER TRANSISTORS |
| 中文描述： | 硅平面功率晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 222K |
| 代理商： | CJF45H11 |
SILICON PLANAR POWER TRANSISTORS
CJF44H11 NPN
CJF45H11 PNP
TO-220FP Fully Isolated
Plastic Package
General Purpose Power Amplification and Switching such as Output or Driver Stages
in Applications
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage ( for 1sec,R.H.
<30%, T
A
=25oC )
Collector Current -Continuous
- Peak
Total Power Dissipation @ Tc=25oC
Derate Above 25oC
Total Power Dissipation @ Ta=25oC
Derate Above 25oC
Operating and Storage Junction
Temperature Range
V
CEO
V
EBO
80
5
3500
1500
10
20
50
1.67
2
0.016
V
V
(1) V
ISOL
(a)
(b)
I
C
V
RMS
V
RMS
A
A
W
W/oC
W
W/oC
oC
P
D
P
D
T
j,
T
stg
- 55 to +150
THERMAL RESISTANCE
From Junction to Ambient
From Junction to Case
R
th (j-a)
R
th (j-c)
62.5
3.5
oC/W
oC/W
(1) RMS Isolation Voltage : (a) 3500 V
RMS
with Package in Clip Mounting Position (b) 1500 V
RMS
with Package
in Screw Mounting Position (for 1sec, R.H.<30% ,Ta=25oC; Pulse Test: Pulse Width <300
μ
s, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (Tc=25oC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Collector Emitter sustaining Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
V
CEO (sus)
I
CES
I
EBO
V
CE(Sat)
V
BE(Sat)
h
FE
I
C
=30mA, I
B
=0
V
CE
=Rated V
CEO
, V
BE
=0
V
EB
=5V, I
C
=0
I
C
=8A, I
B
=0.4A
I
C
=8A, I
B
=0.8A
I
C
=2A, V
CE
=1V
I
C
=4A, V
CE
=1V
80
V
μ
A
μ
A
V
V
1
10
1.85
1.5
60
35
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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