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參數資料
| 型號： | CM100TF-12H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 122 x 32 pixel format, LED Backlight available |
| 中文描述： | 大功率開關使用絕緣型 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | CM100TF-12H |
Sep.1998
Dimensions
Inches
4.02
±
0.02
3.58
±
0.02
3.15
±
0.01
2.913
±
0.01
Millimeters
102
±
0.5
91.0
±
0.5
80.0
±
0.25
74.0
±
0.25
A
B
C
D
E
1.69
43.0
F
1.18+0.06/-0.02 30.0+1.5/-0.5
G
1.18
30.0
H
1.16
29.5
J
1.06
27.0
K
0.96
24.5
L
0.87
22.0
M
0.79
20.0
N
0.67
17.0
Dimensions
Inches
Millimeters
P
0.65
16.5
Q
0.55
14.0
R
0.47
12.0
S
0.43
11.0
T
0.39
10.0
U
0.33
8.5
V
0.32
8.1
X
0.24
6.0
Y
0.22 Dia.
Dia. 5.5
Z
M4 Metric
M4
AA
0.08
2.0
AB
0.28
7.0
Outline Drawing and Circuit Diagram
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge con-
figuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
u
Low Drive Power
u
Low V
CE(sat)
u
Discrete Super-Fast Recovery
Free-Wheel Diode
u
High Frequency Operation
u
Isolated Baseplate for Easy
Heat Sinking
Applications:
u
AC Motor Control
u
Motion/Servo Control
u
UPS
u
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100TF-12H
is a 600V (V
CES
), 100 Ampere
Six-IGBT Module.
Type
Current Rating
Amperes
V
CES
Volts (x 50)
CM
100
12
AB
F
H
V
TAB #110, t = 0.5
C
X
L
E
A
G
N
D
U
AA
L
B
P
G
K
J
T
R
M
M
AA
S
X
Q
Q
X
N
Z - M4 THD
(7 TYP.)
Y DIA. (4 TYP.)
G
u
P E
u
P
G
v
P E
v
P
G
w
P E
w
P
G
u
N E
u
N
G
v
N E
v
N
G
w
N E
w
N
P
P
N
N
U
V
W
P
GuP
EuP
GuN
EuN
U
GvP
EvP
V
GvN
EvN
GwP
EwP
W
GwN
EwN
P
N
N
MITSUBISHI IGBT MODULES
CM100TF-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
相關PDF資料 |
PDF描述 |
|---|---|
| CM100TF-12H | 122 x 32 pixel format, LED Backlight available |
| CM100TF-28H | 122 x 32 pixel format, LED Backlight available |
| CM100TF-28H | 122 x 32 pixel format, LED Backlight available |
| CM100TU-12F | 240 x 128 pixel format, CFL Backlight with power harness |
| CM100TU-12F | 240 x 128 pixel format, CFL Backlight with power harness |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CM100TF-24 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM100TF-24H | 功能描述:IGBT MOD 6PAC 1200V 100A H SER RoHS:否 類別:半導體模塊 >> IGBT 系列:IGBTMOD™ 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| CM100TF28H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.4KV V(BR)CES | 100A I(C) |
| CM100TF-28H | 功能描述:IGBT MOD 6PAC 1400V 100A H SER RoHS:否 類別:半導體模塊 >> IGBT 系列:IGBTMOD™ 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| CM100TJ-12F | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Trench Gate Design 100 Amperes/600 Volts |
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