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參數(shù)資料
型號(hào): CM300DY-24H
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率開(kāi)關(guān)使用絕緣型
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 45K
代理商: CM300DY-24H
Sep.1998
Dimensions
Inches
Millimeters
A
4.33
110.0
B
3.661
±
0.01
93.0
±
0.25
C
3.15
80.0
D
2.441
±
0.01
62.0
±
0.25
E
1.18 Max.
30.0 Max.
F
1.18
30.0
G
0.98
25.0
H
0.85
21.5
J
0.83
21.2
Dimensions
Inches
Millimeters
K
0.71
18.0
L
0.59
15.0
M
0.55
14.0
N
0.28
7.0
P
0.26 Dia.
Dia. 6.5
Q
0.33
8.5
R
0.24
6.0
S
M6 Metric
M6
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
two IGBTs in a half-bridge configu-
ration with each transistor having a
reverse-connected super-fast re-
covery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
u
Low Drive Power
u
Low V
CE(sat)
u
Discrete Super-Fast Recovery
Free-Wheel Diode
u
High Frequency Operation
u
Isolated Baseplate for Easy
Heat Sinking
Applications:
u
AC Motor Control
u
Motion/Servo Control
u
UPS
u
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM300DY-
24H is a 1200V (V
CES
), 300 Am-
pere Dual IGBT Module.
Type
Current Rating
Amperes
V
CES
Volts (x 50)
CM
300
24
MITSUBISHI IGBT MODULES
CM300DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
M
E
Q
A
N
K
N
K
N
B
G
J
C
F
R
R
G
D
H
L
TAB#110 t=0.5
K
P - DIA.
(4 TYP.)
C2E1
E
C
E
C
E2
C1
S - M6 THD.
(3 TYP)
C
E
C2E1
E
C
E2
C1
相關(guān)PDF資料
PDF描述
CM300DY-24H Dual IGBTMOD 300 Amperes/1200 Volts
CM300DY-24NF HIGH POWER SWITCHING USE
CM300DY-28H HIGH POWER SWITCHING USE INSULATED TYPE
CM300DY-28H Dual IGBTMOD 300 Amperes/1400 Volts
CM300E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM300DY-24NF 功能描述:IGBT MOD DUAL 1200V 300A NF SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開(kāi)):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CM300DY-24NF_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM300DY-24NFH 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR
CM300DY-24S 制造商:Powerex Power Semiconductors 功能描述:IGBT HALF BRIDGE 1200V 300A MOD 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 300A; Transistor Polarity:Dual N Channel; DC Collector Current:300A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:2.27kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-40C 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR
CM300DY-28H 功能描述:IGBT MOD DUAL 1400V 300A H SER RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開(kāi)):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
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