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參數(shù)資料
| 型號(hào)： | CM600HU-12H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 42K |
| 代理商： | CM600HU-12H |
Sep.1998
Dimensions
Inches
Millimeters
A
4.21
107.0
B
3.66
±
0.01
93.0
±
0.25
C
2.44
62.0
D
1.89
±
0.01
48.0
±
0.25
E
0.53
13.5
F
0.49
12.55
G
0.39
10.0
Dimensions
Inches
Millimeters
H
1.02
26.0
J
0.37
9.5
K
1.14
29.0
L
0.81
20.5
M
0.26 Dia.
6.5 Dia.
N
1.34 +0.04/-0.02
34 +1.0/-0.5
P
1.02 +0.04/-0.02
26 +1.0/-0.5
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of one
IGBT in a single configuration with
a reverse-connected super-fast re-
covery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
u
Low Drive Power
u
Low V
CE(sat)
u
Discrete Super-Fast Recovery
Free-Wheel Diode
u
High Frequency Operation
u
Isolated Baseplate for Easy
Heat Sinking
Applications:
u
AC Motor Control
u
Motion/Servo Control
u
UPS
u
Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM600HU-12H is a
600V (V
CES
), 600 Ampere Single
IGBT Module.
Current Rating
Amperes
V
CES
Type
Volts (x 50)
CM
600
12
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM600HU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
CM
E
E
G
C
A
H
E
F
M (4 - Mounting
Holes)
K
D
2 - M4 NUTS
2 - M8 NUTS
T
C
Measured Point
J
G
C
L
B
P
N
E
E
G
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CM600HU-12H | Single IGBTMOD 600 Amperes/600 Volts |
| CM600HU-24F | HIGH POWER SWITCHING USE |
| CM600HU-24F | Trench Gate Design Single IGBTMOD⑩ 600 Amperes/1200 Volts |
| CM600HU-24H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600HU-24H | Single IGBTMOD 600 Amperes/1200 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM600HU-12H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600HU-24F | 功能描述:IGBT MOD SGL 1200V 600A F SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CM600HU-24F_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM600HU-24H | 功能描述:IGBT MOD SGL 1200V 600A H SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CM600HU-24H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
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