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參數資料
| 型號： | CM75E3U-24H |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Chopper IGBTMOD 75 Amperes/1200 Volts |
| 中文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 文件頁數： | 1/4頁 |
| 文件大小： | 44K |
| 代理商： | CM75E3U-24H |
Sep.1998
Dimensions
Inches
Millimeters
A
3.7
94.0
B
3.15
±
0.01
80.0
±
0.25
C
1.89
48.0
D
0.94
24.0
E
0.28
7.0
F
0.67
17.0
G
0.91
23.0
H
0.91
23.0
J
0.43
11.0
L
0.16
4.0
Dimensions
Inches
Millimeters
M
0.47
12.0
N
0.53
13.5
O
0.1
2.5
P
0.63
16.0
Q
0.98
25.0
R
1.18 +0.04/-0.02 30.0 +1.0/-0.5
S
0.3
7.5
T
0.83
21.2
U
0.16
4.0
V
0.51
13.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel di-
ode and an anode-collector con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management
.
Features:
u
Low Drive Power
u
Low V
CE(sat)
u
Discrete Super-Fast Recovery
Free-Wheel Diode
u
High Frequency Operation
u
Isolated Baseplate for Easy
Heat Sinking
Application:
u
Brake
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75E3U-24H is a
1200V (V
CES
), 75 Ampere IGBT
Module.
Current Rating
Amperes
V
CES
Type
Volts (x 50)
CM
75
24
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM75E3U-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
G
E2
E2
G2
C1
C2E1
A
B
G
F
C
V
2 - Mounting
Holes
(6.5 Dia.)
E
U
H
E2
C1
C2E1
C
3-M5 Nuts
D
J
L
N
M
P
P
Q
O
O
T
C
Measured
Point
R
S
T
TAB #110 t = 0.5
相關PDF資料 |
PDF描述 |
|---|---|
| CM75TF-12H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM75TF-12H | Six-IGBT IGBTMOD 75 Amperes/600 Volts |
| CM75TF-24H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM75TF-24H | Six-IGBT IGBTMOD 75 Amperes/1200 Volts |
| CM75TF-28H | HIGH POWER SWITCHING USE INSULATED TYPE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CM75E3U-24H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM75E3Y12E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 75A I(C) |
| CM75E3Y24E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 75A I(C) |
| CM75MX-12A | 功能描述:CIB MOD 600V 75A NX SER RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| CM75MX-12A_12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
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