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參數(shù)資料
| 型號： | CM75TU-12H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 56K |
| 代理商： | CM75TU-12H |
Sep.1998
Dimensions
Inches
Millimeters
A
4.02
102.0
B
3.15
±
0.01
3.58
80.0
±
0.25
91.0
C
D
2.91
±
0.01
74.0
±
0.25
E
0.43
11.0
F
0.79
20.0
G
0.39
10.0
H
0.75
19.1
J
0.79
20.0
Dimensions
Inches
Millimeters
K
0.05
1.25
L
0.74
18.7
M
1.55
39.3
N
0.12
3.05
P
0.32
8.1
Q
1.02
26.0
R
0.47
11.85
S
0.22 Dia.
5.5 Dia.
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
u
Low Drive Power
u
Low V
CE(sat)
u
Discrete Super-Fast Recovery
Free-Wheel Diode
u
High Frequency Operation
u
Isolated Baseplate for Easy
Heat Sinking
Applications:
u
AC Motor Control
u
Motion/Servo Control
u
UPS
u
Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75TU-12H is a
600V (V
CES
), 75 Ampere Six-
IGBT Module.
Current Rating
Amperes
V
CES
Volts (x 50)
Type
CM
75
12
MITSUBISHI IGBT MODULES
CM75TU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
A
B
F
S(4 - Mounting
Holes)
D
C
Q
P
u
v
w
GuN
EuN
GvN
EvN
GwN
EwN
GuP
EuP
GwP
EwP
GvP
EvP
E
G
G
E
E
R
H
H
E
E
E
K
TAB#110 t=0.5
N
H
H
J
J
5 - M4 NUTS
M
L
K
GuP
EuP
GuN
EuN
U
P
N
GvP
EvP
GvN
EvN
V
GwP
EwP
GwN
EwN
W
T
C
Measured
Point
T
Measured
Point
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CM75TU-12H | Six IGBTMOD 75 Amperes/600 Volts |
| CM75TU-24F | HIGH POWER SWITCHING USE |
| CM75TU-24F | Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts |
| CM75TU-24H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM75TU-24H | Six IGBTMOD 75 Amperes/1200 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM75TU-12H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM75TU-24F | 功能描述:IGBT MOD 6PAC 1200V 75A F SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CM75TU-24F_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
| CM75TU-24H | 功能描述:IGBT MOD 6PAC 1200V 75A U SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CM75TU-24H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
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