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參數資料
| 型號： | CM75TU-24H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關使用絕緣型 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 51K |
| 代理商： | CM75TU-24H |
Sep.1998
Dimensions
Inches
Millimeters
A
4.21
107.0
B
3.54
±
0.01
4.02
90.0
±
0.25
102.0
C
D
3.15
±
0.01
80.0
±
0.25
E
0.43
11.0
F
0.91
23.0
G
0.47
12.0
H
0.85
21.7
J
0.91
23.0
Dimensions
Inches
Millimeters
K
0.15
3.75
L
0.67
17.0
M
1.91
48.5
N
0.03
0.8
P
0.32
8.1
Q
1.02
26.0
R
0.22 Dia.
5.5 Dia.
S
0.57
14.4
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
u
Low Drive Power
u
Low V
CE(sat)
u
Discrete Super-Fast Recovery
Free-Wheel Diode
u
High Frequency Operation
u
Isolated Baseplate for Easy
Heat Sinking
Applications:
u
AC Motor Control
u
Motion/Servo Control
u
UPS
u
Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75TU-24H is a
1200V (V
CES
), 75 Ampere Six-
IGBT Module.
Current Rating
Amperes
V
CES
Volts (x 50)
Type
CM
75
24
MITSUBISHI IGBT MODULES
CM75TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
u
w
v
T
C
Measured
Point
T
Measured
Point
GwN
EwN
D
C
5 - M5 NUTS
M
L
K
R 4 - Mounting
Holes
K
E
E
G
H
G
E
B
F
H
S
A
GvP
EvP
GuN
EuN
GvN
EvN
E
E
E
H
J
H
N
J
TAB#110 t=0.5
P
Q
GuP
EuP
GwP
EwP
GuP
EuP
GuN
EuN
U
P
N
GvP
EvP
GvN
EvN
V
GwP
EwP
GwN
EwN
W
相關PDF資料 |
PDF描述 |
|---|---|
| CM75TU-24H | Six IGBTMOD 75 Amperes/1200 Volts |
| CM800E2Z-66H | HIGH POWER SWITCHING USE |
| CM800HA-24H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM800HA-24H | Single IGBTMOD 800 Amperes/1200 Volts |
| CM82C54 | CMOS Programmable Interval Timer |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CM75TU-24H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM75TU-34KA | 功能描述:IGBT MOD 6PAC 1700V 75A KA SER RoHS:是 類別:半導體模塊 >> IGBT 系列:IGBTMOD™ 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| CM75TU-34KA_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM75TX-24S | 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE 6-PAC 75A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE NX-SERIES 6-PAC 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 75A, Transistor Polarity:Six N Channel, DC Collector Current:75A, Collector Emitter Voltage Vces:1.8V, Power Dissipation Pd:600W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Min:-40C 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM75YE13-12F | 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
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