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參數資料
| 型號： | CMBD4150 |
| 廠商： | Continental Device India Limited |
| 英文描述： | SILICON PLANAR EPITAXIAL HIGH SPEED DIODE |
| 中文描述： | 硅平面高速二極管外延 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 161K |
| 代理商： | CMBD4150 |
Continental Device India Limited
Data Sheet
Page 1 of 3
SILICON PLANAR EPITAXIAL HIGH SPEED DIODE
Marking
CMBD4150 = D18
ABSOLUTE MAXIMUM RATINGS
Continuous reverse voltage
Repetitive peak reverse voltage
Repetitive peak forward current
Junction temperature
Peak forward surge current
T = 1
μ
sec.
T = 1 sec.
Reverse recovery time when switched from
I
F
= 400 mA to I
R
= 400 mA; R
L
= 100
measured at I
R
= 4 mA
V
R
V
RRM
I
FRM
T
j
50
75
600
150
V
V
mA
° C
max.
max.
max.
I
FSM
I
FSM
max.
max.
4
A
A
0.5
T
rr
max.
6
ns
RATINGS (at T
A
= 25 °C, unless otherwise specified)
Storage Temperature
T
stg
–55 to +150
° C
CMBD4150
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = ANODE
2 = NC
3 = CATHODE
2
3
1
SOT-23 Formed SMD Package
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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