- 您現在的位置：買賣IC網 > PDF目錄384227 > CMBT9013I (Continental Device India Limited) NPN silicon planar transistor PDF資料下載
參數資料
| 型號： | CMBT9013I |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN silicon planar transistor |
| 中文描述： | NPN硅平面晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 75K |
| 代理商： | CMBT9013I |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR TRANSISTOR
CMBT 9013
SOT-23
MARKING: AS BELOW
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj, Tstg
VALUE
35
30
5.0
500
250
-55 to +150
UNIT
V
V
V
mA
mW
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL TEST CONDITION
VCBO
IC=100uA, IE=0
VCEO
IC=1mA, IB=0
VEBO
IE=100uA, IC=0
ICBO
VCB=25V, IE=0
IEBO
VEB=3V, IC=0
hFE
IC=50mA,VCE=1V *
IC=300mA,VCE=1V
VCE(Sat) IC=150mA,IB=15mA
IC=300mA,IB=30mA
VBE(Sat) IC=150mA,IB=15mA
IC=300mA,IB=30mA
MIN
35
30
5.0
-
-
118
40
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
100
500
305
-
0.20
0.60
1.0
1.20
UNIT
V
V
V
nA
nA
Collector Emitter Saturation Voltage
V
V
V
V
Base Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
ft VCE=10V,IC=50mA,
f=100MHz
140
-
-
MHz
CLASSIFICATION
hFE*
MARKING
G/H/I
118-305
3GI
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
PIN CONFIGURATION (NPN)
1 = BASE
2 = EMITTER
3 = COLLECTOR
2
1
3
Continental Device India Limited
Data Sheet
Page 1 of 3
相關PDF資料 |
PDF描述 |
|---|---|
| CMBT918 | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 350MA I(C) | TO-236AA |
| CMBT9013H | npn silicon planar transistor |
| CMBTA56 | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-236AA |
| CMBTA05 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 500MA I(C) | TO-236AA |
| CMBTA06 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-236AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CMBT9014 | 功能描述:兩極晶體管 - BJT Si Planar Trans NPN, 30V, .1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBT9014B | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR TRANSISTOR |
| CMBT9014C | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR TRANSISTOR |
| CMBT9014D | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR TRANSISTOR |
| CMBT9014-T | 功能描述:兩極晶體管 - BJT NPN Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。