
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
Parameter
Frequency Range
Gain
Power Output
Harmonics
Condition
Min
1.85
22
28.0
Typ
Max
1.91
Units
GHz
dB
dBm
dBc
dBc
dB
dB
%
mA
mA
@ Digital power output
Meets J-STD-018 CDMA mask
2nd @ Digital power output
3rd @ Digital power output
24
28.5
-35
-40
4.5
10
30
500
250
-30
-35
5.0
Noise Figure
Return Loss
Efficiency
Positive Supply Current (Id)
Quiescent Current (Iq)
Negative Supply Current (-Ig)
Negative Supply Voltage (-Vg)
Pout CDMA
Pout CDMA
No RF
27
0.5
1.0
mA
-1.3
-1.7
-2.2
V
CMM1321
Features
J
30% Linear Power Added Efficiency
J
28.5 dBm Output Power
(ANSI J-STD-018 CDMA)
J
24 dB Gain
J
Tested Under Digital Modulation
J
Low Cost SO-8 Surface Mount Package
Applications
J
PCS Handsets
J
PCS Base Stations
J
Wireless Local Loop Subscriber Units
J
1.6 GHz Satellite Subscriber Units
Description
The CMM1321 is a 5 V linear power amplifier
intended for use in PCS handsets, wireless local loop sub-
scriber units and PCS base stations. The CMM1321 offers
maximum performance and flexibility. The amplifier is
designed to support the requirements of PCS CDMA (ANSI
J-STD-018) systems.
The CMM1321 is packaged in a low-cost, space effi-
cient SO-8 power package that gives excellent electrical stabili-
ty and thermal handling performance with a R
Θ
of less than
18° C/W. The part is designed to require minimal external cir-
cuitry for bias and matching, simplifying design and keeping
board space and cost to a minimum. Through matching adjust-
ment, equivalent performance can also be achieved for the 1.93
to 1.99 GHz PCS bands as well as the 1.6 GHz satellite bands.
1.85 to 1.91 GHz
5V, 28.5 dBm, PCS
Power Amplifier
Preliminary Produc t Information
November 1996
(1 of 5)
Back plane is ground and
must be soldered to thermally
conductive ground plane.
Vg2
4
RF IN
1
Vg1
3
GND
2
6
RF OUT/Vd2
5
RF OUT/Vd2
8
N/C
7
Vd1
Functional Block Diagram
Electrical Characteristics
Unless otherwise specified, the following specifications are guaranteed at room temperature with drain voltage (+Vd) = 4.8 V in Celeritek test fixture.
Absolute Maximum Ratings
Parameter
Drain Voltage (+Vd)
Drain Current (Id)
RF Input Power
DC Gate Voltage (-Vg)
Rating
+9.0 V*
1.8 A
+15 dBm*
-4.0 V*
Parameter
Power Dissipation
Thermal Resistance
Storage Temperature
Rating
5 W
18°C/W
-65°C to +150°C
Parameter
Operating Temperature
Channel Temperature
Soldering Temperature
Rating
-40°C to +100°C
175°C
260°C for 5 Sec.
Recommended Operating Conditions
Parameter
Drain Voltage (+Vd)
Typ
4.5 to 5.1
Units
Volts
Parameter
Operating Temperature (PC Board)
Typ
-30 to +80
Units
°C
* Max (+Vd) and (-Vg) under linear operation. Max potential difference across the device in RF compression (2Vd+ |-Vg|) not to exceed the minimum breakdown voltage (Vbr) of +18V.