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參數資料
型號: CMM2321-AK-000T
廠商: MIMIX BROADBAND INC
元件分類: 放大器
英文描述: 2300 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: POWER, SOP-8
文件頁數: 1/4頁
文件大小: 466K
代理商: CMM2321-AK-000T
2.3 to 2.5 GHz
1 Watt Power Amplifier
Page 1 of 4
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM2321-AK
August 2007 - Rev 05-Aug-07
Functional Block Diagram
Back plane is ground and
must be soldered to thermally
conductive ground plane.
Vg2 4
RF IN 1
Vg1 3
GND 2
6 RF OUT/Vd2
5 RF OUT/Vd2
8 N/C
7 Vd1
Features
48% Power Added Efficiency
31.5 dBm Output Power
Low Distortion
Low Cost SO-8 Surface Mount Package
Wireless Datacom
Wireless Bar Code Scanners
Inter-Building Campus Networks
Applications
The CMM2321 is a power amplifier intended for use in 2.4 GHz ISM
band applications such as wireless datacom equipment, wireless
bar code scanners and inter-building campus networks. This
flexible amplifier can be biased to support the requirements of
frequency hopping or direct sequence systems. The CMM2321 is
packaged in a low-cost, space efficient SO-8 power package that
gives excellent electrical stability and thermal handling
performance with a R
of less than 18 C/W. The part is designed
to require minimal external circuitry for bias matching, simplifying
design and keeping board space and cost to a minimum.
General Description
Absolute Maximum Ratings
Electrical Characteristics
Recommended Operating Conditions
Parameter
Rating
Parameter
Rating
Parameter
Rating
Drain Voltage (+Vd)
+9.0 V*
Power Dissipation
5 W
Operating Temperature
-40°C to +100°C
Drain Current (Id)
1.8 A
Thermal Resistance
18°C/W
Channel Temperature
175°C
RF Input Power
+15 dBm*
Storage Temperature
-65°C to +150°C
Soldering Temperature
260°C for 5 Sec.
DC Gate Voltage (-Vg)
-4.0 V*
* Max (+Vd) and (-Vg) under linear operation. Max potential difference across the device in RF compression (2Vd+ |-Vg|) not to exceed the minimum breakdown voltage (Vbr) of +18V.
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Drain Voltage (+Vd)
4.5 to 5.1
Volts
Operating Temperature (PC Board)
-30 to +80
°C
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Frequency Range
2.3
2.5
GHz
P-1dB
30
30.5
dBm
POUT
P
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Gain
18
20
dB
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d
0
3
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5
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3
Noise Figure
5.0
dB
Return Loss
10
dB
Negative Supply Current (-Ig)
0.5
1.0
mA
Positive Supply Current (Id)
@ P-1dB
675
mA
The following specifications are guaranteed at room temperature with drain voltage (+Vd) = 4.8 V @ 2.45 GHz in Celeritek test fixture.
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