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參數資料
| 型號： | CMM2321-AK-000T |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 2.4 to 2.5 GHz 1 Watt Power Amplifier |
| 中文描述： | 2.4至2.5 GHz 1瓦功率放大器 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 90K |
| 代理商： | CMM2321-AK-000T |
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
Parameter
Frequency Range
P-1dB
P
OUT
Saturated
Efficiency (PAE)
Gain
Harmonics
Condition
Min
2.4
30
31
Typ
Max
2.5
Units
GHz
dBm
dBm
%
dB
dBc
dBc
dB
dB
mA
mA
30.5
31.5
48
20
-35
-40
5.0
10
0.5
675
P
IN
= +14 dBm
@ Saturation
18
2nd @ Pout = +30 dBm
3rd @ Pout = +30 dBm
-30
-35
Noise Figure
Return Loss
Negative Supply Current (-Ig)
Positive Supply Current (Id)
1.0
@ P-1dB
Electrical Characteristics
The following specifications are guaranteed at room temperature with drain voltage (+Vd) = 4.8 V @ 2.45 GHz in Celeritek test fixture.
CMM2321
Features
J
48% Power Added Efficiency
J
31.5 dBm Output Power
J
Low Distortion
J
Low Cost SO-8 Surface Mount Package
Applications
J
Wireless Datacom
J
Wireless Bar Code Scanners
J
Inter-Building Campus Networks
Description
The CMM2321 is a power amplifier intended for use
in 2.4 GHz ISM band applications such as wireless datacom
equipment, wireless bar code scanners and inter-building cam-
pus networks. This flexible amplifier can be biased to support
the requirements of frequency hopping or direct sequence sys-
tems. The CMM2321 is packaged in a low-cost, space effi-
cient SO-8 power package that gives excellent electrical sta-
bility and thermal handling performance with a R
Θ
of less
than 18° C/W. The part is designed to require minimal exter-
nal circuitry for bias matching, simplifying design and keep-
ing board space and cost to a minimum.
2.4 to 2.5 GHz
1 Watt PowerAmplifier
Recommended Operating Conditions
Parameter
Drain Voltage (+Vd)
Typ
4.5 to 5.1
Units
Volts
Parameter
Operating Temperature (PC Board)
Typ
-30 to +80
Units
°C
Preliminary Produc t Information
April 1997
(1 of 4)
Back plane is ground and
must be soldered to thermally
conductive ground plane.
Vg2
4
RF IN
1
Vg1
3
GND
2
6
RF OUT/Vd2
5
RF OUT/Vd2
8
N/C
7
Vd1
Functional Block Diagram
Absolute Maximum Ratings
Parameter
Drain Voltage (+Vd)
Drain Current (Id)
RF Input Power
DC Gate Voltage (-Vg)
Rating
+9.0 V*
1.8 A
+15 dBm*
-4.0 V*
Parameter
Power Dissipation
Thermal Resistance
Storage Temperature
Rating
5 W
18°C/W
-65°C to +150°C
Parameter
Operating Temperature
Channel Temperature
Soldering Temperature
Rating
-40°C to +100°C
175°C
260°C for 5 Sec.
* Max (+Vd) and (-Vg) under linear operation. Max potential difference across the device in RF compression (2Vd+ |-Vg|) not to exceed the minimum breakdown voltage (Vbr) of +18V.
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