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參數資料
| 型號： | CMT2N7000 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Small Signal MOSFET |
| 中文描述： | 小信號MOSFET |
| 文件頁數： | 1/5頁 |
| 文件大小： | 118K |
| 代理商： | CMT2N7000 |
CMT2N7000
S
MALL
S
IGNAL
MOSFET
2002/10/07
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 1
GENERAL DESCRIPTION
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring
up to 200mA DC and can deliver pulsed currents up to
500mA. This product is particularly suited for low voltage,
low current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
PIN CONFIGURATION
TO-92
Top View
FEATURES
!
High Density Cell Design for Low R
DS(ON)
!
Voltage Controlled Small Signal Switch
!
Rugged and Reliable
!
High Saturation Current Capability
SYMBOL
1
2
3
S
G
D
D
S
G
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT2N7000
ABSOLUTE MAXIMUM RATINGS
Package
TO-92
Rating
Symbol
V
DSS
V
DGR
I
D
I
DM
V
GS
V
GSM
P
D
Value
60
60
200
500
±20
±40
350
2.8
-55 to 150
357
300
Unit
V
V
mA
V
V
mW
mW/
℃
℃
℃
/W
℃
Drain Source Voltage
Drain-Gate Voltage (R
GS
= 1.0M
)
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
Derate above 25
℃
Operating and Storage Temperature Range
Thermal Resistance
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
T
J
, T
STG
θ
JA
T
L
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