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參數(shù)資料
| 型號： | CMT60N03N263 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 32 Megabit, 3.0 Volt-Only Page Mode Flash Memory |
| 中文描述： | N通道功率MOSFET的邏輯電平 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 307K |
| 代理商： | CMT60N03N263 |
CMT60N03
N-C
HANNEL
Logic Level Power M
OSFET
2004/05/24
Preliminary
Champion Microelectronic Corporation
Page 1
APPLICATION
Buck Converter High Side Switch
Other Applications
V
DSS
30V
FEATURES
R
DS(ON)
Typ.
10.8m
I
D
50A
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Improved UIS Ruggedness
SYMBOL
PIN CONFIGURATION
TO-252 TO-263
Front View Front View
1
2
3
G
D
S
ABSOLUTE MAXIMUM RATINGS
D
S
G
N-Channel MOSFET
Rating
Symbol
V
DSS
I
D
I
D
I
DM
V
GS
P
D
Value
30
50
Fig.3
Fig.6
±20
52
0.5
3.0
-55 to 150
500
300
260
Fig.8
Unit
V
A
Drain to Source Voltage (Note 1)
Drain to Current
Gate-to-Source Voltage
Total Power Dissipation
Derating Factor above 25
Peak Diode Recovery dv/dt (Note 4)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy L=1.1mH,I
D
=30 Amps
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
THERMAL RESISTANCE
Symbol
Parameter
R
θ
JC
Junction-to-case
Continuous Tc = 25
Continuous Tc = 100
Pulsed Tc = 25
Continue
, V
GS
@10V (Note 2)
, V
GS
@10V (Note 2)
, V
GS
@10V (Note 3)
V
W
W/
V/ns
dv/dt
T
J
, T
STG
E
AS
T
L
T
PKG
I
AS
mJ
Min
Typ
Max
2.4
Units
/W
Test Conditions
Water cooled heatsink, P
D
adjusted for a peak junction
temperature of +150
Minimum pad area, 2-oz copper, FR-4 circuit board, double
sided
1 cubic foot chamber, free air
R
θ
JA
Junction-to-ambient
(PCB Mount)
Junction-to-ambient
50
/W
R
θ
JA
62
/W
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