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參數(shù)資料
| 型號(hào)： | CPV363 |
| 廠商： | International Rectifier |
| 英文描述： | IGBT SIP MODULE Fast IGBT |
| 中文描述： | IGBT的高級(jí)督察模塊快速IGBT |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 453K |
| 代理商： | CPV363 |
C-149
IGBT SIP MODULE
Features
Fully isolated printed circuit board mount package
Switching-loss rating includes all "tail" losses
HEXFRED
Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
—
—
0.1
20 (0.7)
Max.
3.5
5.5
—
—
Units
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
CS
(MODULE)
Wt
°C/W
g (oz)
TM
soft ultrafast diodes
Output Current in a Typical 5.0 kHz Motor Drive
7.65 A
RMS
per phase (2.4 kW total) with T
C
= 90°C, T
J
= 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Product Summary
PD - 5.023B
Fast IGBT
CPV363MF
Thermal Resistance
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
16
8.7
50
50
6.1
50
±20
2500
36
14
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
V
ISOL
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
V
RMS
W
-40 to +150
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbfin (0.55-0.8 Nm)
Absolute Maximum Ratings
3
6
7
13
19
18
15
10
16
4
9
12
D1
D3
D5
D2
D4
D6
Q1
Q2
Q3
Q4
Q5
Q6
1
IMS-2
Revision 1
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CPV363MF | IGBT SIP MODULE Fast IGBT |
| CPV363MK | IGBT SIP MODULE Short Circuit Rated UltraFast IGBT |
| CPV363MM | IGBT SIP MODULE Short Circuit Rated Fast IGBT |
| CPV363MU | IGBT SIP MODULE Ultra-Fast IGBT |
| CPV364M4K | IGBT SIP MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CPV363M4F | 功能描述:IGBT SIP MODULE 600V 9A IMS-2 RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CPV363M4FPBF | 制造商:Vishay Semiconductors 功能描述:IGBT MODULE HEX IMS-2 |
| CPV363M4K | 功能描述:IGBT SIP MODULE 600V 6A IMS-2 RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CPV363M4KPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) |
| CPV363M4U | 功能描述:IGBT SIP MODULE 600V 6.8A IMS-2 RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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