欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: CSB1065N
英文描述: TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
中文描述: 晶體管|晶體管|進步黨| 50V五(巴西)總裁| 3A條一(c)|至126
文件頁數: 1/3頁
文件大小: 58K
代理商: CSB1065N
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CSB1058
TO-92
BCE
Low Frequency Power Amplifier.
Complementary CSD1489
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL
BVCBO
BVCEO
BVEBO
IC
PC
Tj, Tstg
VALUE
20
16
6.0
2.0
0.75
-55 to +150
UNIT
V
V
V
A
W
deg C
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE *
TEST CONDITION
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=16V, IE=0
VEB=6V, IC=0
VCE=2V, IC=0.1A
VCE=2V, IC=2A
IC=1A, IB=0.1A
MIN
20
16
6.0
-
-
100
40
-
TYP
-
-
-
-
-
-
-
-
MAX
-
-
-
2.0
0.2
400
-
0.3
UNIT
V
V
V
uA
uA
Collector Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
VCE(Sat)
V
ft
Cob
VCE=2V, IC=10mA,
VCB=10V, IE=0
f=1MHz
-
-
80
50
-
-
MHz
pF
hFE* Classification :
A 100-240;
B 200-400;
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
相關PDF資料
PDF描述
CSB1065P TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
CSB1065Q TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
CSB1065R TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
CSB1086 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126
CSB1086A TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126
相關代理商/技術參數
參數描述
CSB1065P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
CSB1065Q 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
CSB1065R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
CSB-1083 制造商:Microsemi Corporation 功能描述:CHIP - Gel-pak, waffle pack, wafer, diced wafer on film
CSB1086 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126
主站蜘蛛池模板: 郎溪县| 石台县| 佳木斯市| 双鸭山市| 台州市| 玉林市| 东莞市| 江山市| 永和县| 丹凤县| 汪清县| 沈阳市| 江永县| 天台县| 丹江口市| 永泰县| 郸城县| 赤壁市| 金川县| 庄河市| 洮南市| 荆州市| 郧西县| 开阳县| 保山市| 星座| 深水埗区| 西丰县| 尚义县| 运城市| 台湾省| 易门县| 嫩江县| 北川| 池州市| 庆阳市| 隆安县| 博客| 政和县| 尼勒克县| 松原市|