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參數資料
| 型號： | CSB1626 |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 6A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|達林頓|進步黨| 110伏特五（巴西）總裁| 6A條一（c）| TO - 220AB現有 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 77K |
| 代理商： | CSB1626 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON EPITAXIAL POWER DARLINGTON TRANSISTOR
CSB1626
TO-220
Plastic Package
Complementary CSD2495
ABSOLUTE MAXIMUM RATINGS (Ta=25oC)
DESCRIPTION
Collector -Base Voltage(open emitter)
Collector -Emitter Voltage(open base)
Emitter Base Voltage(open collector)
Collector Current
Base Current
Total Power Dissipation upto Tc=25oC
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
VALUE
110
110
5.0
6.0
1.0
30
150
-65 to +150
UNIT
V
V
V
A
A
W
oC
oC
ELECTRICAL CHARACTERISTICS (Tc=25oC Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Cut off Current
Emitter Cut off Current
Breakdown Voltages
Collector Emitter Saturation Voltage
I
CBO
I
EBO
V
CEO
V
CE(sat)
V
BE(sat)
h
FE
h
FE
f
T
V
CB
=110V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=30mA, I
B
=0
I
C
=5A, I
B
=5mA
I
C
=5A, I
B
=5mA
I
C
=5A,V
CE
=4V
100
2
μ
A
mA
V
V
V
K
K
MHz
110
2.5
3
30
20
DC Current Gain
5
5
O/P
Transistors frequency
Output Capacitance
I
C
=0.5A,V
CE
=12V
60
C
ob
V
CB
=10V,I
E
=0,f=1MHz
55
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
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