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參數(shù)資料
| 型號： | CSC5200F |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON POWER TRANSISTOR |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 72K |
| 代理商： | CSC5200F |
NPN SILICON POWER TRANSISTOR
CSC5200F
TO-3P
POWER AMPLIFIER APPLICATIONS.
Complementary CSA1943F
MAXIMUM RATINGS(Ta=25 deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current
Base Current
Power Dissipation @ Tc=25 deg C
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector-Cuttoff Current
Emitter-Cuttoff Current
Collector -Emitter Voltage
DC Current Gain
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj, Tstg
VALUE
160
160
5.0
12
1.2
90
-55 to +150
UNIT
V
V
V
A
A
W
deg C
SYMBOL
ICBO
IEBO
VCEO
hFE
TEST CONDITION
VCB=160V, IE=0
VEB=5V, IC=0
IC=50mA, IB=0
IC=1A,VCE=5V
IC=7A,VCE=5V
IC=8A, IB=0.8A
IC=7A,VCE=5V
VCE=5V, IC=1A
VCB=10V, IE=0
f=1MHz
R : 55-110, O : 80-160
MIN
-
-
160
55
35
-
-
-
-
TYP
-
-
-
-
-
-
-
30
200
MAX
5.0
5.0
-
160
-
3.0
1.5
-
-
UNIT
uA
uA
V
Collector Emitter Saturation Voltage
Base Emitter on Voltage
Transition Frequency
Collector Output Capacitance
VCE(Sat)
VBE(on)
ft
Cob
V
V
MHz
pF
*hFE Classification :
Continental Device India Limited
Data Sheet
Page 1 of 2
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CSC5200FO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 12A I(C) | TO-247VAR |
| CSC5200FR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 12A I(C) | TO-247VAR |
| CSC568 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 20MA I(C) | TO-72 |
| CSC5E120 | 制造商:Honeywell Sensing and Control 功能描述: |
| CSC5E-25 | 制造商:Honeywell Sensing and Control 功能描述: |
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