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參數(shù)資料
| 型號(hào)： | CSC945G |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 161K |
| 代理商： | CSC945G |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON EPITAXIAL TRANSISTOR
CSC945
TO-92
Plastic Package
Audio Frequency General Purpose And Driver Stage Amplifier Application.
Complementary to CSA733
ABSOLUTE MAXIMUM RATINGS (Ta=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Base Current
Collector Power Dissipation
Derate Above 25oC
Operating And Storage Junction
Temperature Range
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
C
I
CM
I
B
P
C
VALUE
50
60
5
100
200
20
250
2.5
-55 to +125
UNIT
V
V
V
mA
mA
mA
mW
mW/oC
oC
T
j
, T
stg
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
UNIT
MIN
50
TYP
MAX
Collector Emitter Breakdown
Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
BV
CEO
I
C
=10mA,I
B
=0
V
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
I
C
=100
μ
A,I
E
=0
I
E
=10
μ
A, I
C
=0
V
CB
=60V, I
E
= 0
V
BE
=5V, I
C
= 0
V
CE
=6V,I
C
=0.1mA
V
CE
=6V,I
C
=1mA
60
5
V
V
μ
A
μ
A
0.1
0.1
50
90
600
Base Emitter Saturation Voltage
Collector Emitter Saturation
Voltage
Base Emitter On Voltage
V
BE(sat)
*
V
CE(sat)
*
I
C
=100mA,I
B
=10mA
I
C
=100mA,I
B
=10mA
0.86
0.15
1.0
0.3
V
V
V
BE (on)
I
C
=1mA, V
CE
=6V
0.55
0.62
0.65
V
VALUE
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 4
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| CSD1025 | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-220AB |
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