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參數資料
| 型號： | CSD1025 |
| 英文描述： | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|叩| 250V五（巴西）總裁| 6A條一（c）| TO - 220AB現有 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 170K |
| 代理商： | CSD1025 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON POWER DARLINGTON TRANSISTOR
CSD 1025
TO-220
Plastic Package
ABSOLUTE MAXIMUM RATINGS (Ta=25oC unless specified otherwise )
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current DC
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
D
T
j
, T
stg
VALUE
200
200
7.0
8.0
12.0
0.5
1.0
50
-55 to +150
UNIT
V
V
V
A
A
A
A
W
oC
Peak
Base Current DC
Peak
Total Power Dissipation @Tc=25oC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
R
th( j-c)
2.5
oC/W
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
Collector Cut off Current
SYMBOL
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
TEST CONDITION
V
CB
=200V, I
E
=0
V
CE
=200V, I
B
=0
V
EB
=7V, I
C
=0
I
C
=5A, I
B
=10mA
I
C
=5A, I
B
=10mA
I
C
=5A,V
CE
=3V
MIN
TYP
MAX
0.1
0.1
5
1.5
2.0
30
UNIT
mA
mA
mA
V
V
K
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
1.5
DYNAMIC CHARACTERISTICS
Transition Frequency
f
T
I
C
=0.8A,V
CE
=10V
50
MHz
SWITCHING TIME
Turn on Time
Storage Time
t
on
t
stg
2
8
μ
s
μ
s
I
B1
=
IB2
=10mA, I
C
=5A,
R
L
=5
, V
BB2
= 4V
Fall time
t
f
5
μ
s
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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