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參數資料
| 型號： | CSD1489B |
| 英文描述： | TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 2A I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 16V的五（巴西）總裁|甲一（c）|至92 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 58K |
| 代理商： | CSD1489B |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
CSD1489
TO-92
BCE
Low Frequency Power Amplifier.
Complementary CSB1058
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL
BVCBO
BVCEO
BVEBO
IC
PC
Tj, Tstg
VALUE
20
16
6.0
2.0
0.75
-55 to +150
UNIT
V
V
V
A
W
deg C
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE *
TEST CONDITION
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=16V, IE=0
VEB=6V, IC=0
VCE=2V, IC=0.1A
VCE=2V, IC=2A
IC=1A, IB=0.1A
MIN
20
16
6.0
-
-
100
75
-
TYP
-
-
-
-
-
-
-
-
MAX
-
-
-
2.0
0.2
500
-
0.3
UNIT
V
V
V
uA
uA
Collector Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
VCE(Sat)
V
ft
Cob
VCE=2V, IC=10mA,
VCB=10V, IE=0
f=1MHz
-
-
80
20
-
-
MHz
pF
hFE* Classification :
A 100-240; B 200-400;
C 350-500
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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相關代理商/技術參數 |
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| CSD1489C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 2A I(C) | TO-92 |
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| CSD1506P | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN PLASTIC POWER TRANSISTOR |
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