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參數資料
| 型號： | CXXXXT290-SXX00-X |
| 廠商： | Cree, Inc. |
| 英文描述： | XThin㈢ LEDs |
| 中文描述： | XThin㈢發光二極管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 243K |
| 代理商： | CXXXXT290-SXX00-X |
Subject to change without notice.
www.cree.com
FEATURES
XThin LED Performance
Blue
XT-12 – 12.0 mW min.
XT-16 – 16.0 mW min.
XT-18 – 18.0 mW min.
XT-21 – 21.0 mW min.
XT-24 – 24.0 mW min.
Green – 7.0 mW min.
Low Forward Voltage – 3.2 V Typical at 20 mA
Class 2 ESD Rating
Sn Contact for Low-Temp. Die Attach Methods
Die Attach Options
Flux Eutectic; Flux & Temperature (-C)
Eutectic; Temperature & Pressure (-D)
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APPLICATIONS
SMT Packages
Cellular Phone LCD Backlighting
Digital Camera Flash
Mobile Appliance Key Pads
White LEDs
Blue LEDs
LED Video Displays
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XThin
LEDs
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XT290-S
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Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary GSiC substrate to deliver superior price/performance for high-intensity LEDs. These LED
chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a
single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and
require a low forward voltage. Cree’s XT chips are tested for conformity to optical and electrical specifications
and the ability to withstand 1000V ESD. Applications for XThin include next-generation mobile appliances for use
in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption
are required.
D
C
xxx
XT290-S
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Chip Diagram
Bottom View for -D
GSiC LED Chip
300 x 300 μm
Gold Bond Pad
105 μm Diameter
SiC Substrate
t = 115 μm
Backside
Contact
Metal
Cathode (-)
Bottom View for -C
Top View
Bottom View
Die Cross Section
Anode (+)
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相關代理商/技術參數 |
參數描述 |
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| CXXXXT420-SXX00-A | 制造商:CREE 制造商全稱:Cree, Inc 功能描述:XThin㈢ LEDs |
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