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參數資料
| 型號： | CY62136FV30LL-45BVXI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 2-Mbit (128K x 16) Static RAM |
| 中文描述： | 128K X 16 STANDARD SRAM, 45 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48 |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 428K |
| 代理商： | CY62136FV30LL-45BVXI |
Cypress Semiconductor Corporation
Document Number: 001-08402 Rev. *D
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 03, 2007
CY62136FV30 MoBL
2-Mbit (128K x 16) Static RAM
Features
■
Very high speed: 45 ns
■
Temperature ranges
Industrial: –40°C to +85°C
Automotive: –40°C to +125°C
■
Wide voltage range: 2.20V–3.60V
■
Pin compatible with CY62136V, CY62136CV30/CV33, and
CY62136EV30
■
Ultra low standby power
Typical standby current: 1
μ
A
Maximum standby current: 5
μ
A (Industrial)
■
Ultra low active power
Typical active current: 1.6 mA at f = 1 MHz (45 ns speed)
■
Easy memory expansion with CE, and OE features
■
Automatic power down when deselected
■
CMOS for optimum speed and power
■
Available in Pb-free 48-ball VFBGA and 44-pin TSOP II
packages
Functional Description
The CY62136FV30 is a high performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life (MoBL
) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption by 90% when addresses are not toggling. Placing
the device into standby mode reduces power consumption by
more than 99% when deselected (CE HIGH). The input and
output pins (IO
0
through IO
15
) are placed in a high impedance
state when:
■
Deselected (CE HIGH)
■
Outputs are disabled (OE HIGH)
■
Both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH)
■
Write operation is active (CE LOW and WE LOW)
Write to the device by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from IO pins (IO
0
through IO
7
) is written into the location
specified on the address pins (A
0
through A
16
). If Byte High
Enable (BHE) is LOW, then data from IO pins (IO
8
through IO
15
)
is written into the location specified on the address pins (A
0
through A
16
).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appears on IO
0
to IO
7
. If
Byte High Enable (BHE) is LOW, then data from memory
appears on IO
8
to IO
15
. See the
“Truth Table”
on page 9 for a
complete description of read and write modes.
For best practice recommendations, refer to the Cypress
application note
AN1064, SRAM System Guidelines.
128K x 16
RAM Array
IO
0
–IO
7
R
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
COLUMN DECODER
A
1
A
1
A
1
A
1
A
1
S
DATA IN DRIVERS
OE
BLE
IO
8
–IO
15
CE
WE
BHE
A
1
A
0
A
9
A
10
Logic Block Diagram
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| CY62136FV30LL-45ZSXI | 2-Mbit (128K x 16) Static RAM |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CY62136FV30LL-45BVXIT | 功能描述:靜態隨機存取存儲器 SLO 3.0V SUPER LO POWER 128Kx16 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62136FV30LL-45XAKJ | 制造商:Cypress Semiconductor 功能描述: |
| CY62136FV30LL-45ZSXA | 功能描述:靜態隨機存取存儲器 2-Mbit (128K x 16) 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62136FV30LL-45ZSXAT | 功能描述:靜態隨機存取存儲器 2-Mbit (128K x 16) 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62136FV30LL45ZSXI | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3V 2M-Bit 128K x 16 45ns 44-Pin TSOP-II |
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