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參數資料
| 型號： | CY62167E |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | Replacement for National Semiconductor part number 9328FMQB. Buy from authorized manufacturer Rochester Electronics. |
| 中文描述： | 16兆位（1米× 16 / 2米× 8）靜態RAM |
| 文件頁數： | 1/12頁 |
| 文件大小： | 441K |
| 代理商： | CY62167E |
16-Mbit (1M x 16 / 2M x 8) Static RAM
CY62167E MoBL
Cypress Semiconductor Corporation
Document #: 001-15607 Rev. *A
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised June 07, 2007
Features
Configurable as 1M x 16 or as 2M x 8 SRAM
Very high speed: 45 ns
Wide voltage range: 4.5V–5.5V
Ultra low standby power
— Typical standby current: 1.5
μ
A
— Maximum standby current: 12
μ
A
Ultra low active power
— Typical active current: 2.2 mA @ f = 1 MHz
Easy memory expansion with CE
1
, CE
2
, and OE features
Automatic power down when deselected
CMOS for optimum speed and power
Offered in 48-pin TSOP I package
Functional Description
[1]
The CY62167E is a high performance CMOS static RAM
organized as 1M words by 16 bits/2M words by 8 bits. This
device features advanced circuit design to provide an ultra low
active current. This is ideal for providing More Battery Life
(MoBL
) in portable applications such as cellular telephones.
The device also has an automatic power down feature that
reduces power consumption by 99% when addresses are not
toggling. Place the device into standby mode when deselected
Logic Block Diagram
(CE
1
HIGH, or CE
2
LOW, or both BHE and BLE are HIGH).
The input and output pins (IO
0
through IO
15
) are placed in a
high impedance state when:
The device is deselected (CE
1
HIGH or CE
2
LOW)
Outputs are disabled (OE HIGH)
Both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH) or
A write operation is in progress (CE
1
LOW, CE
2
HIGH, and
WE LOW)
To write to the device, take Chip Enables (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) input LOW. If Byte Low Enable
(BLE) is LOW, then data from IO pins (IO
0
through IO
7
), is
written into the location specified on the address pins (A
0
through A
19
). If Byte High Enable (BHE) is LOW, then data
from the IO pins (IO
8
through IO
15
) is written into the location
specified on the address pins (A
0
through A
19
).
To read from the device, take Chip Enables (CE
1
LOW and
CE
2
HIGH) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins appears on IO
0
to IO
7
. If Byte High Enable (BHE) is LOW,
then data from memory appears on IO
8
to IO
15
. See the
“Truth
Table” on page 10
for a complete description of read and write
modes.
1M × 16 / 2M x 8
RAM ARRAY
IO
0
–IO
7
R
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
COLUMN DECODER
A
1
A
1
A
1
A
1
A
1
S
DATA IN DRIVERS
OE
IO
8
–IO
15
WE
BLE
BHE
A
1
A
0
A
1
A
9
A
1
A
10
POWER DOWN
CIRCUIT
BHE
BLE
CE
2
CE
1
CE
2
CE
1
BYTE
A
1
Note
1. For best practice recommendations, refer to the Cypress application note
AN1064, SRAM System Guidelines
.
[+] Feedback
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CY62167ELL-45XZI | 制造商:Cypress Semiconductor 功能描述: |
| CY62167ELL-45ZXI | 功能描述:靜態隨機存取存儲器 SLo 5.0V ULTRA LoPwr 32Kx8 PbFree 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62167ELL-45ZXIT | 功能描述:靜態隨機存取存儲器 SLo 5V SUPER LoPwr 1MEGX16 PbFree 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62167EV18LL-558VXI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY62167EV18LL-55BAXI | 功能描述:靜態隨機存取存儲器 16Mbit 靜態隨機存取存儲器 55ns 1.8V CMOS RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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