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參數資料
| 型號： | CY62167EV18 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | Replacement for National Semiconductor part number 9334DM. Buy from authorized manufacturer Rochester Electronics. |
| 中文描述： | 16兆位（1米× 16）靜態RAM |
| 文件頁數： | 1/12頁 |
| 文件大小： | 459K |
| 代理商： | CY62167EV18 |
CY62167EV18 MoBL
16-Mbit (1M x 16) Static RAM
Cypress Semiconductor Corporation
Document #: 38-05447 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 16, 2007
Features
■
Very high speed: 55 ns
■
Wide voltage range: 1.65V – 2.25V
■
Ultra low standby power
Typical standby current: 1.5
μ
A
Maximum standby current: 12
μ
A
■
Ultra low active power
Typical active current: 2.2 mA @ f = 1 MHz
■
Easy memory expansion with CE
1
, CE
2
, and OE features
■
Automatic power down when deselected
■
CMOS for optimum speed and power
■
Offered in Pb-free 48-ball VFBGA packages
Functional Description
The CY62167EV18 is a high performance CMOS static RAM
organized as 1M words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life
(MoBL
) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that reduces power consumption
by 99% when addresses are not toggling. Place the device into
standby mode when deselected (CE
1
HIGH or CE
2
LOW or both
BHE and BLE are HIGH). The input and output pins (IO
0
through
IO
15
) are placed in a high impedance state when: the device is
deselected (CE
1
HIGH or CE
2
LOW); outputs are disabled (OE
HIGH); both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH); and a write operation is in progress (CE
1
LOW, CE
2
HIGH and WE LOW).
To write to the device, take Chip Enables (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) input LOW. If Byte Low Enable
(BLE) is LOW, then data from IO pins (IO
0
through IO
7
) is written
into the location specified on the address pins (A
0
through A
19
).
If Byte High Enable (BHE) is LOW, then data from IO pins (IO
8
through IO
15
) is written into the location specified on the address
pins (A
0
through A
19
).
To read from the device, take Chip Enables (CE
1
LOW and CE
2
HIGH) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins appears
on IO
0
to IO
7
. If Byte High Enable (BHE) is LOW, then data from
memory appears on IO
8
to IO
15
. See the
Truth Table on page 9
for a complete description of read and write modes.
For best practice recommendations, refer to the Cypress
application note
AN1064, SRAM System Guidelines
.
Logic Block Diagram
Power Down
Circuit
BHE
BLE
CE
2
CE
1
1M × 16
RAM ARRAY
IO
0
–IO
7
R
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
COLUMN DECODER
A
1
A
1
A
1
A
1
A
1
S
DATA IN DRIVERS
OE
IO
8
–IO
15
WE
BLE
BHE
A
1
A
0
A
1
A
9
A
1
A
10
CE
2
CE
1
A
1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CY62167EV18LL-558VXI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY62167EV18LL-55BAXI | 功能描述:靜態隨機存取存儲器 16Mbit 靜態隨機存取存儲器 55ns 1.8V CMOS RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62167EV18LL-55BVI | 功能描述:靜態隨機存取存儲器 16MB (1Mx16) 1.8v 55ns Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62167EV18LL-55BVIT | 功能描述:靜態隨機存取存儲器 16 Mbit Static RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62167EV18LL55BVXI | 制造商:Cypress Semiconductor 功能描述: |
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