- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380181 > CY7C1041B (Cypress Semiconductor Corp.) 256K x 16 Static RAM(256K x 16靜態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | CY7C1041B |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 256K x 16 Static RAM(256K x 16靜態(tài)RAM) |
| 中文描述： | 256K × 16靜態(tài)RAM（256K × 16靜態(tài)RAM）的 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 251K |
| 代理商： | CY7C1041B |
256K x 16 Static RAM
CY7C1041B
Cypress Semiconductor Corporation
Document #: 38-05142 Rev. *A
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised March 24, 2005
Features
High speed
— t
AA
= 12 ns
Low active power
— 1540 mW (max.)
Low CMOS standby power (L version)
— 2.75 mW (max.)
2.0V Data Retention (400
μ
W at 2.0V retention)
Automatic power-down when deselected
TTL-compatible inputs and outputs
Easy memory expansion with CE and OE features
Functional Description
The CY7C1041B is a high-performance CMOS static RAM
organized as 262,144 words by 16 bits.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
0
through I/O
7
), is
written into the location specified on the address pins (A
0
through A
17
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
8
through I/O
15
) is written into the location
specified on the address pins (A
0
through A
17
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
0
to I/O
7
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
8
to I/O
15
. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O
0
through I/O
15
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1041B is available in a standard 44-pin
400-mil-wide body width SOJ and 44-pin TSOP II package
with center power and ground (revolutionary) pinout.
1
A
1
A
Logic Block Diagram
Pin Configuration
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
COLUMN
DECODER
R
S
INPUT BUFFER
256K x 16
ARRAY
1024 x 4096
A
0
A
1
A
1
A
1
A
1
A
1
A
9
A
1
I/O
0
–I/O
7
OE
BLE
I/O
8
–I/O
15
CE
BHE
WE
A
5
A
6
A
7
A
8
A
9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
31
30
32
36
35
34
33
37
40
39
38
Top View
SOJ
TSOP II
41
44
43
42
16
17
29
28
V
CC
V
SS
I/O
4
I/O
5
A
0
A
1
A
2
A
3
A
4
OE
BHE
BLE
V
SS
V
CC
I/O
11
I/O
10
I/O
9
I/O
8
NC
A
17
A
16
A
15
I/O
15
I/O
14
I/O
13
I/O
12
CE
I/O
0
I/O
1
I/O
2
I/O
3
18
19
20
21
27
26
25
24
22
23
I/O
6
I/O
7
A
14
A
13
A
12
A
11
A
10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1041DV33 | 4-Mbit (256K x 16) Static RAM |
| CY7C1041DV33-12BVXE | 4-Mbit (256K x 16) Static RAM |
| CY7C1041DV33-12VXE | 4-Mbit (256K x 16) Static RAM |
| CY7C1041DV33-12ZSXE | 4-Mbit (256K x 16) Static RAM |
| CY7C1041D | 4-Mbit (256K x 16) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1041B-10ZC | 制造商:Cypress Semiconductor 功能描述:4MB (256K X 16)- FAST ASYNCH SRAM - Trays |
| CY7C1041B-12VXCT | 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC SGL 5V 4MBIT 256KX16 12NS 44PIN MLD SOJ - Tape and Reel |
| CY7C1041B12ZC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1041B-15VC | 功能描述:IC SRAM 4MBIT 15NS 44SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| CY7C1041B-15VCT | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 4M-Bit 256K x 16 15ns 44-Pin SOJ T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。