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參數資料
| 型號： | CY7C106BN-20VC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 256K x 4 Static RAM |
| 中文描述： | 256K X 4 STANDARD SRAM, 20 ns, PDSO28 |
| 封裝： | 0.400 INCH, SOJ-28 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 360K |
| 代理商： | CY7C106BN-20VC |
256K x 4 Static RAM
CY7C106BN
CY7C1006BN
Cypress Semiconductor Corporation
Document #: 001-06429 Rev. **
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised February 1, 2006
Features
High speed
— t
AA
=
15 ns
CMOS for optimum speed/power
Low active power
— 495 mW
Low standby power
— 275 mW
2.0V data retention (optional)
Automatic power-down when deselected
TTL-compatible inputs and outputs
Functional Description
The CY7C106BN and CY7C1006BN are high-performance
CMOS static RAMs organized as 262,144 words by 4 bits.
Easy memory expansion is provided by an active LOW Chip
Enable (CE), an active LOW Output Enable (OE), and
three-state drivers. These devices have an automatic
power-down feature that reduces power consumption by more
than 65% when the devices are deselected.
Writing to the devices is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the four I/O
pins (I/O
0
through I/O
3
) is then written into the location
specified on the address pins (A
0
through A
17
).
Reading from the devices is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the four I/O pins.
The four input/output pins (I/O
0
through I/O
3
) are placed in a
high-impedance state when the devices are deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE and WE LOW).
The CY7C106BN is available in a standard 400-mil-wide SOJ;
the CY7C1006BN is available in a standard 300-mil-wide SOJ.
LogicBlockDiagram
Pin Configuration
SOJ
512 x 512 x 4
ARRAY
A
1
A
2
A
3
A
4
A
5
A
0
A
1
A
1
A
1
A
1
A
1
COLUMN
DECODER
R
S
POWER
DOWN
OE
INPUTBUFFER
A
1
A
1
A
1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
20
19
18
17
21
24
23
22
Top View
25
28
27
26
GND
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
CE
OE
A
17
A
16
A
15
A
14
A
13
A
12
A
11
V
CC
I/O
3
I/O
2
I/O
1
I/O
0
WE
A
0
NC
WE
CE
I/O
0
I/O
1
I/O
2
I/O
3
A
6
A
7
A
8
A
9
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相關代理商/技術參數 |
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|---|---|
| CY7C106D-10VXI | 功能描述:靜態隨機存取存儲器 1M 512K IND FAST ASYNC 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C106D-10VXIT | 功能描述:靜態隨機存取存儲器 1M 512K IND FAST ASYNC 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1071DV3312BAXI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1071DV33-12BAXI | 功能描述:靜態隨機存取存儲器 32MB (2MX16) 3.3V 12ns 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1071DV33-12BAXIT | 功能描述:靜態隨機存取存儲器 32-Mbit (2M x 16) 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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