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參數資料
| 型號： | CY7C107-15VI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 1M x 1 Static RAM |
| 中文描述： | 1M X 1 STANDARD SRAM, 15 ns, PDSO28 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-28 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 153K |
| 代理商： | CY7C107-15VI |
1M x 1 Static RAM
CY7C107
CY7C1007
Cypress Semiconductor Corporation
3901 North First Street
San Jose
December 1992 – Revised September 3, 1999
CA 95134
408-943-2600
Features
High speed
—t
AA
= 12 ns
CMOS for optimum speed/power
Low active power
—825 mW
Low standby power
—275 mW
2.0V data retention (optional)
—
100
μ
W
Automatic power-down when deselected
TTL-compatible inputs and outputs
Functional Description
The CY7C107 and CY7C1007 are high-performance CMOS
static RAMs organized as 1,048,576 words by 1 bit. Easy
memory expansion is provided by an active LOW Chip Enable
(CE) and three-state drivers. These devices have an automatic
power-down feature that reduces power consumption by more
than 65% when deselected.
Writing to the devices is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the input pin
(D
IN
) is written into the memory location specified on the ad-
dress pins (A
0
through A
19
).
Reading from the devices is accomplished by taking Chip En-
able (CE) LOW while Write Enable (WE) remains HIGH. Under
these conditions, the contents of the memory location speci-
fied by the address pins will appear on the data output (D
OUT
)
pin.
The output pin (D
OUT
) is placed in a high-impedance state
when the device is deselected (CE HIGH) or during a write
operation (CE and WE LOW).
The CY7C107 is available in a standard 400-mil-wide SOJ; the
CY7C1007 is available in a standard 300-mil-wide SOJ.
LogicBlock Diagram
Pin Configuration
SOJ
Top View
512x2048
ARRAY
A
5
A
6
A
7
A
8
COLUMN
DECODER
R
S
POWER
DOWN
WE
CE
INPUT BUFFER
D
OUT
D
IN
A
4
A
3
A
2
A
1
A
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
20
19
18
17
21
24
23
22
25
28
27
26
GND
A
11
A
12
A
13
A
14
A
WE
V
CC
A
9
A
8
A
7
A
6
A
5
A
10
CE
A
0
D
IN
D
OUT
A
2
A
1
A
4
NC
A
3
NC
A
16
A
17
A
18
A
19
A
1
A
1
A
1
A
1
A
1
A
1
A
1
A
1
A
1
A
1
A
9
107-1
107-2
Selection Guide
7C107-12
7C1007-12
12
150
7C107-15
7C1007-15
15
135
7C107-20
7C1007-20
20
125
7C107-25
7C1007-25
25
120
7C107-35
35
110
Maximum Access Time (ns)
Maximum Operating
Current (mA)
Maximum Standby
Current (mA)
50
40
30
30
25
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| CY7C109-12VC | Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket |
| CY7C1009-12VC | Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; No. of Contacts:3; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket RoHS Compliant: No |
相關代理商/技術參數 |
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|---|---|
| CY7C1071DV3312BAXI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1071DV33-12BAXI | 功能描述:靜態隨機存取存儲器 32MB (2MX16) 3.3V 12ns 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1071DV33-12BAXIT | 功能描述:靜態隨機存取存儲器 32-Mbit (2M x 16) 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1079DV33-12BAXI | 功能描述:靜態隨機存取存儲器 32MB (4Mx8) 3.3v 12ns 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1079DV33-12BAXIT | 功能描述:靜態隨機存取存儲器 32-Mbit Static RAM 12ns 250mA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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