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參數(shù)資料
| 型號(hào)： | CY7C1357A-133AC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 256K x 36/512K x 18 Synchronous Flow-Thru SRAM with NoBL Architecture |
| 中文描述： | 512K X 18 ZBT SRAM, 6.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 |
| 文件頁(yè)數(shù)： | 1/28頁(yè) |
| 文件大小： | 576K |
| 代理商： | CY7C1357A-133AC |
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256K x 36/512K x 18 Synchronous Flow-Thru
SRAM with NoBL Architecture
CY7C1357A
CY7C1355A
Cypress Semiconductor Corporation
Document #: 38-05265 Rev. *A
3901 North First Street
San Jose
CA 95134
408-943-2600
Revised August 23, 2002
Features
Zero Bus Latency, no dead cycles between write and
read cycles
Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns
Fast clock speed: 133, 117, and 100 MHz
Fast OE access time: 6.5, 7.0, and 7.5ns
Internally synchronized registered outputs eliminate
the need to control OE
3.3V –5% and +5% power supply
3.3V or 2.5V I/O supply
Single WEN (READ/WRITE) control pin
Positive clock-edge triggered, address, data, and
control signal registers for fully pipelined applications
Interleaved or linear four-word burst capability
Individual byte write (BWa–BWd) control (may be tied
LOW)
CEN pin to enable clock and suspend operations
Three chip enables for simple depth expansion
Automatic Power-down feature available using ZZ
mode or CE deselect.
JTAG boundary scan (except CY7C1357A)
Low-profile 119-bump, 14-mm × 22-mm BGA (Ball Grid
Array) for CY7C1355A, and 100-pin TQFP packages for
both devices
Functional Description
The CY7C1355A and CY7C1357A SRAMs are designed to
eliminate dead cycles when transitions from READ to WRITE
or vice versa. These SRAMs are optimized for 100 percent bus
utilization and achieves Zero Bus Latency (ZBL). They
integrate 262,144
×
36 and 524,288
×
18 SRAM cells, respec-
tively, with advanced synchronous peripheral circuitry and a
2-bit counter for internal burst operation. These employ
high-speed, low power CMOS designs using advanced
triple-layer polysilicon, double-layer metal technology. Each
memory cell consists of Six transistors.
All synchronous inputs are gated by registers controlled by a
positive-edge-triggered Clock Input (CLK). The synchronous
inputs include all addresses, all data inputs, depth-expansion
Chip Enables (CE, CE
, and CE
), Cycle Start Input (ADV/LD),
Clock Enable (CEN), Byte Write Enables (BWa, BWb, BWc,
and BWd), and read-write control (WEN). BWc and BWd apply
to CY7C1355A only.
Address and control signals are applied to the SRAM during
one clock cycle, and one cycle later, its associated data
occurs, either read or write.
A Clock Enable (CEN) pin allows operation of the
CY7C1355A/CY7C1357A to be suspended as long as
necessary. All synchronous inputs are ignored when (CEN) is
HIGH and the internal device registers will hold their previous
values.
There are three Chip Enable pins (CE, CE
, CE
) that allow
the user to deselect the device when desired. If any one of
these three are not active when ADV/LD is LOW, no new
memory operation can be initiated and any burst cycle in
progress is stopped. However, any pending data transfers
(read or write) will be completed. The data bus will be in
high-impedance state one cycle after chip is deselected or a
write cycle is initiated.
The CY7C1355A and CY7C1357A have an on-chip 2-bit burst
counter. In the burst mode, the CY7C1355A and CY7C1357A
provide four cycles of data for a single address presented to
the SRAM. The order of the burst sequence is defined by the
MODE input pin. The MODE pin selects between linear and
interleaved burst sequence. The ADV/LD signal is used to load
a new external address (ADV/LD = LOW) or increment the
internal burst counter (ADV/LD = HIGH)
Output Enable (OE), Sleep Enable (ZZ) and burst sequence
select (MODE) are the asynchronous signals. OE can be used
to disable the outputs at any given time. ZZ may be tied to
LOW if it is not used.
Four pins are used to implement JTAG test capabilities. The
JTAG circuitry is used to serially shift data to and from the
device. JTAG inputs use LVTTL/LVCMOS levels to shift data
during this testing mode of operation.
Selection Guide
7C1355A-133
7C1357A-133
6.5
410
30
7C1355A-117
7C1357A-117
7
385
30
7C1355A-100
7C1357A-100
7.5
350
30
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
相關(guān)PDF資料 |
PDF描述 |
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| CY7C1356BV25 | 256K x 36/512K x 18 Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1356BV25-166 | 256K x 36/512K x 18 Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1356BV25-200 | 256K x 36/512K x 18 Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1356BV25-225 | 256K x 36/512K x 18 Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1354BV25 | 256K x 36/512K x 18 Pipelined SRAM with NoBL⑩ Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1357A-133ACT | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| CY7C1357B-100BZC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1357B-117AC | 制造商:Rochester Electronics LLC 功能描述:8M- 512KX18 3.3V FLOW-THROUGH-NOBL SRAM - Bulk |
| CY7C1357B-117AI | 制造商:Rochester Electronics LLC 功能描述:8M- 512KX18 3.3V FLOW-THROUGH-NOBL SRAM - Bulk |
| CY7C1357C-100AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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