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參數(shù)資料
| 型號： | CY7C1441AV33 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM(36-Mb (1M x 36/2M x 18/512K x 72)流通式SRAM) |
| 中文描述： | 36兆位（1米x 36/2M x 18/512K × 72）流通過的SRAM（36字節(jié)（100萬x 36/2M x 18/512K × 72）流通式的SRAM） |
| 文件頁數(shù)： | 1/31頁 |
| 文件大小： | 522K |
| 代理商： | CY7C1441AV33 |
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36-Mbit (1M x 36/2M x 18/512K x 72)
Flow-Through SRAM
CY7C1441AV33
CY7C1443AV33
CY7C1447AV33
Cypress Semiconductor Corporation
Document #: 38-05357 Rev. *F
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised June 23, 2006
Features
Supports 133-MHz bus operations
1M x 36/2M x 18/512K x 72 common I/O
3.3V core power supply
2.5V or 3.3V I/O power supply
Fast clock-to-output times
— 6.5 ns (133-MHz version)
Provide high-performance 2-1-1-1 access rate
User-selectable burst counter supporting Intel
Pentium
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed write
Asynchronous output enable
CY7C1441AV33, CY7C1443AV33 available in
JEDEC-standard lead-free 100-pin TQFP package,
lead-free and non-lead-free 165-ball FBGA package.
CY7C1447AV33 available in lead-free and non-lead-free
209-ball FBGA package
IEEE 1149.1 JTAG-Compatible Boundary Scan
“ZZ” Sleep Mode option
Functional Description
[1]
The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33 are
3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow-through
SRAMs, respectively designed to interface with high-speed
microprocessors with minimum glue logic. Maximum access
delay from clock rise is 6.5 ns (133-MHz version). A 2-bit
on-chip counter captures the first address in a burst and incre-
ments the address automatically for the rest of the burst
access. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining Chip Enable (CE
1
), depth-expansion Chip
Enables (CE
2
and CE
3
), Burst Control inputs (ADSC, ADSP,
and ADV), Write Enables (BW
x
, and BWE), and Global Write
(GW). Asynchronous inputs include the Output Enable (OE)
and the ZZ pin.
The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33 allows
either interleaved or linear burst sequences, selected by the
MODE input pin. A HIGH selects an interleaved burst
sequence, while a LOW selects a linear burst sequence. Burst
accesses can be initiated with the Processor Address Strobe
(ADSP) or the cache Controller Address Strobe (ADSC)
inputs. Address advancement is controlled by the Address
Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The
CY7C1441AV33/CY7C1443AV33/CY7C1447AV33
operates from a +3.3V core power supply while all outputs may
operate with either a +2.5 or +3.3V supply. All inputs and
outputs are JEDEC-standard JESD8-5-compatible.
Selection Guide
133 MHz
6.5
310
120
100 MHz
8.5
290
120
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Note:
1. For best-practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1443AV33 | 36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM(36-Mb (1M x 36/2M x 18/512K x 72)流通式SRAM) |
| CY7C1447AV33 | 36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM(36-Mb (1M x 36/2M x 18/512K x 72)流通式SRAM) |
| CY7C1444AV33 | 36-Mbit (1M x 36/2Mx 18) Pipelined DCD Sync SRAM(36-Mb (1M x 36/2M x 18)管道式DCD同步SRAM) |
| CY7C1445AV33 | 36-Mbit (1M x 36/2Mx 18) Pipelined DCD Sync SRAM(36-Mb (1M x 36/2M x 18)管道式DCD同步SRAM) |
| CY7C1470V25 | 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture(72-Mb (2M x 36/4M x 18/1M x 72)管道式SRAM（NoBL結(jié)構(gòu)）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1441AV33-100BZXI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1441AV33-117AXC | 功能描述:靜態(tài)隨機存取存儲器 1Mx36 3.3V Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1441AV33-133AXC | 功能描述:靜態(tài)隨機存取存儲器 1Mx36 3.3V Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1441AV33-133AXCT | 功能描述:IC SRAM 36MBIT 133MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1441AV33133AXI | 制造商:Cypress Semiconductor 功能描述: |
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